A 16-GB 640-GB/s HBM2E DRAM with a Data-Bus Window Extension Technique and a Synergetic On-Die ECC Scheme

Ki Chul Chun, Yong Ki Kim, Yesin Ryu, Jaewon Park, Chi Sung Oh, Young Yong Byun, So Young Kim, Dong Hak Shin, Jun Gyu Lee, Byung Kyu Ho, Min Sang Park, Seong Jin Cho, Seunghan Woo, Byoung Mo Moon, Beomyong Kil, Sungoh Ahn, Jae Hoon Lee, Soo Young Kim, Seouk Kyu Choi, Jae Seung JeongSung Gi Ahn, Jihye Kim, Jun Jin Kong, Kyomin Sohn, Nam Sung Kim, Jung Bae Lee

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Engineering & Materials Science