A 16-GB 640-GB/s HBM2E DRAM with a Data-Bus Window Extension Technique and a Synergetic On-Die ECC Scheme

Ki Chul Chun, Yong Ki Kim, Yesin Ryu, Jaewon Park, Chi Sung Oh, Young Yong Byun, So Young Kim, Dong Hak Shin, Jun Gyu Lee, Byung Kyu Ho, Min Sang Park, Seong Jin Cho, Seunghan Woo, Byoung Mo Moon, Beomyong Kil, Sungoh Ahn, Jae Hoon Lee, Soo Young Kim, Seouk Kyu Choi, Jae Seung JeongSung Gi Ahn, Jihye Kim, Jun Jin Kong, Kyomin Sohn, Nam Sung Kim, Jung Bae Lee

Research output: Contribution to journalArticlepeer-review


Circuit and design techniques are presented for enhancing the performance and reliability of a 3-D-stacked high bandwidth memory-2 extension (HBM2E). A data-bus window extension technique is implemented to cope with reduced clock cycle time ranging from data-path architecture, through-silicon via (TSV) placement, and TSV-PHY alignment. A power TSV placement in the middle of array and at the chip edge along with a dedicated top metal for power mesh improves power IR drop by 62%. An on-die ECC (OD-ECC) scheme featuring a self-scrubbing function is designed to be orthogonal to system ECC. An uncorrectable bit error rate (UBER) is improved by 105 times with the proposed OD-ECC and scrubbing scheme. A memory built-in self-test (MBIST) block supports low-frequency cell and core test in a parallel manner and all channel at-speed operation with adjustable ac parameters. The proposed parallel-bit MBIST reduces test time by 66%. A 16-GB HBM2E fabricated in the second generation of 10-nm class DRAM process achieves a bandwidth up to 640 GB/s (5 Gb/s/pin) and provides a stable bit-cell operation at a high temperature (e.g., 105 ° C).

Original languageEnglish (US)
Article number9240974
Pages (from-to)199-211
Number of pages13
JournalIEEE Journal of Solid-State Circuits
Issue number1
StatePublished - Jan 2021
Externally publishedYes


  • 3-D-stacked memory
  • built-in self-test (BIST)
  • data bus
  • high bandwidth memory (HBM)
  • on-die ECC (OD-ECC)
  • power delivery network (PDN)
  • through-silicon via (TSV)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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