@inproceedings{506ea092ccd7482fb917b62672247a0a,
title = "A 1.5 μm GaInNAs(Sb) laser grown on GaAs by MBE",
abstract = "Summary form only given. Ever increasing bandwidth demands have lead to the commercialization of lasers emitting in the range 1.3-1.55 μm. It was not until the recent discovery of the large bowing parameter of the GaInNAs quaternary that a suitable active layer was found. Recent work has focused on increasing the indium concentration through the use of antimony, both as a constituent and a surfactant. The results of a photoluminescence (PL) study are summarized. We have found that it is possible to maintain high PL intensity for samples out to 1.6 μm.",
author = "Wonill Ha and V. Gambin and S. Bank and M. Wistey and H. Yuen and L. Goddard and Seongsin Kim and J. Harris",
note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; 12th International Conference on Molecular Beam Epitaxy, MBE 2002 ; Conference date: 15-09-2002 Through 20-09-2002",
year = "2002",
doi = "10.1109/MBE.2002.1037759",
language = "English (US)",
series = "MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "61--62",
booktitle = "MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy",
address = "United States",
}