A 1.5 μm GaInNAs(Sb) laser grown on GaAs by MBE

Wonill Ha, V. Gambin, S. Bank, M. Wistey, H. Yuen, L. Goddard, Seongsin Kim, J. Harris

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Summary form only given. Ever increasing bandwidth demands have lead to the commercialization of lasers emitting in the range 1.3-1.55 μm. It was not until the recent discovery of the large bowing parameter of the GaInNAs quaternary that a suitable active layer was found. Recent work has focused on increasing the indium concentration through the use of antimony, both as a constituent and a surfactant. The results of a photoluminescence (PL) study are summarized. We have found that it is possible to maintain high PL intensity for samples out to 1.6 μm.

Original languageEnglish (US)
Title of host publicationMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages61-62
Number of pages2
ISBN (Electronic)0780375815, 9780780375819
DOIs
StatePublished - Jan 1 2002
Externally publishedYes
Event12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States
Duration: Sep 15 2002Sep 20 2002

Publication series

NameMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Other

Other12th International Conference on Molecular Beam Epitaxy, MBE 2002
CountryUnited States
CitySan Francisco
Period9/15/029/20/02

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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    Ha, W., Gambin, V., Bank, S., Wistey, M., Yuen, H., Goddard, L., Kim, S., & Harris, J. (2002). A 1.5 μm GaInNAs(Sb) laser grown on GaAs by MBE. In MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy (pp. 61-62). [1037759] (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MBE.2002.1037759