A 1.45-W/mm, 30-GHz InP-Channel Power HEMT

Olaleye Aina; M. Burgess; M. Mattingly; A. Meerschaert; James M. O'Connor; M. Tong; A. Ketterson; Ilesanmi Adesida

doi:10.1109/55.145060

A 1.45-W/mm, 30-GHz InP-Channel Power HEMT

Olaleye Aina, M. Burgess, M. Mattingly, A. Meerschaert, James M. O'Connor, M. Tong, A. Ketterson, Ilesanmi Adesida

Research output: Contribution to journal › Article › peer-review

Abstract

We report the fabrication of the first AlInAs/InP power HEMT with a saturated power density of 1.45 W/mm, a maximum power-added efficiency of 24%, and a large signal gain of 6.2 dB at 30 GHz. We show that the estimated power performance of this device at the highest frequencies is better than for any other three-terminal devices because the ft of the power HEMT is high, even at high drain-source bias.

Original language	English (US)
Pages (from-to)	300-302
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	13
Issue number	5
DOIs	https://doi.org/10.1109/55.145060
State	Published - May 1992
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.145060

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title = "A 1.45-W/mm, 30-GHz InP-Channel Power HEMT",

abstract = "We report the fabrication of the first AlInAs/InP power HEMT with a saturated power density of 1.45 W/mm, a maximum power-added efficiency of 24%, and a large signal gain of 6.2 dB at 30 GHz. We show that the estimated power performance of this device at the highest frequencies is better than for any other three-terminal devices because the ft of the power HEMT is high, even at high drain-source bias.",

author = "Olaleye Aina and M. Burgess and M. Mattingly and A. Meerschaert and O'Connor, {James M.} and M. Tong and A. Ketterson and Ilesanmi Adesida",

note = "Funding Information: Manuscript received February 10, 1992; revised March 9, 1992. This work was supported by the Naval Research Laboratory under Contract N00014-89-C-2440 at Allied-Signal and by the National Science Foundation under Grant ECD89-43166 at the University of Illinois. M. Tong is an IBM Resident Study Program Fellow.",

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AU - Aina, Olaleye

AU - Burgess, M.

AU - Mattingly, M.

AU - Meerschaert, A.

AU - O'Connor, James M.

AU - Tong, M.

AU - Ketterson, A.

AU - Adesida, Ilesanmi

N1 - Funding Information: Manuscript received February 10, 1992; revised March 9, 1992. This work was supported by the Naval Research Laboratory under Contract N00014-89-C-2440 at Allied-Signal and by the National Science Foundation under Grant ECD89-43166 at the University of Illinois. M. Tong is an IBM Resident Study Program Fellow.

PY - 1992/5

Y1 - 1992/5

N2 - We report the fabrication of the first AlInAs/InP power HEMT with a saturated power density of 1.45 W/mm, a maximum power-added efficiency of 24%, and a large signal gain of 6.2 dB at 30 GHz. We show that the estimated power performance of this device at the highest frequencies is better than for any other three-terminal devices because the ft of the power HEMT is high, even at high drain-source bias.

AB - We report the fabrication of the first AlInAs/InP power HEMT with a saturated power density of 1.45 W/mm, a maximum power-added efficiency of 24%, and a large signal gain of 6.2 dB at 30 GHz. We show that the estimated power performance of this device at the highest frequencies is better than for any other three-terminal devices because the ft of the power HEMT is high, even at high drain-source bias.

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A 1.45-W/mm, 30-GHz InP-Channel Power HEMT

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