A 1.45-W/mm, 30-GHz InP-Channel Power HEMT

Olaleye Aina, M. Burgess, M. Mattingly, A. Meerschaert, James M. O'Connor, M. Tong, A. Ketterson, Ilesanmi Adesida

Research output: Contribution to journalArticle

Abstract

We report the fabrication of the first AlInAs/InP power HEMT with a saturated power density of 1.45 W/mm, a maximum power-added efficiency of 24%, and a large signal gain of 6.2 dB at 30 GHz. We show that the estimated power performance of this device at the highest frequencies is better than for any other three-terminal devices because the ft of the power HEMT is high, even at high drain-source bias.

Original languageEnglish (US)
Pages (from-to)300-302
Number of pages3
JournalIEEE Electron Device Letters
Volume13
Issue number5
DOIs
StatePublished - May 1992

    Fingerprint

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Aina, O., Burgess, M., Mattingly, M., Meerschaert, A., O'Connor, J. M., Tong, M., Ketterson, A., & Adesida, I. (1992). A 1.45-W/mm, 30-GHz InP-Channel Power HEMT. IEEE Electron Device Letters, 13(5), 300-302. https://doi.org/10.1109/55.145060