TY - JOUR
T1 - A -11.6-dBm OMA Sensitivity 0.55-pJ/bit 40-Gb/s Optical Receiver Designed Using a 2-Port-Parameter-Based Design Methodology
AU - Li, Yongxin
AU - Wang, Tianyu
AU - Gamal Ahmed, Mostafa
AU - Xia, Ruhao
AU - Park, Kyu Sang
AU - Khalil, Mahmoud A.
AU - Krishnamurthy, Sashank
AU - Xuan, Zhe
AU - Balamurugan, Ganesh
AU - Kumar Hanumolu, Pavan
N1 - This work was supported by the Intel Research Center for Integrated Photonics. The authors thank Dr. Mozhgan Mansuri and her team at Intel Labs for providing invaluable feedback for the project, as well as Dr. Jahnavi Sharma and Dr. Peng Yan for the help during the tapeout.
PY - 2024
Y1 - 2024
N2 - This article presents a systematic design methodology for transimpedance amplifiers (TIAs) based on two-port parameters, enabling efficient exploration of complex TIA architectures, including multistage forward amplifiers, and facilitating the identification of optimal design parameters to meet target specifications. Using this methodology, an analog front-end (AFE) with a low-noise, low-power, high-gain TIA was designed in a 22-nm FinFET process. Post-layout simulations show that the AFE achieves an input-referred noise current (INRC) of 0.78-μ A rms, an averaged INRC density of 6.4 pA/√Hz, consumes 11.4 mW of power, and provides 87-dB Ω transimpedance gain with a 14.2-GHz bandwidth. The simulated TIA performance closely matches the results predicted by the design methodology, validating its accuracy and effectiveness. A prototype optical receiver featuring this AFE was fabricated in a 22-nm process and measured to achieve an OMA sensitivity of -11.6 dBm with an energy efficiency of 0.55 pJ/bit at a data rate of 40 Gb/s.
AB - This article presents a systematic design methodology for transimpedance amplifiers (TIAs) based on two-port parameters, enabling efficient exploration of complex TIA architectures, including multistage forward amplifiers, and facilitating the identification of optimal design parameters to meet target specifications. Using this methodology, an analog front-end (AFE) with a low-noise, low-power, high-gain TIA was designed in a 22-nm FinFET process. Post-layout simulations show that the AFE achieves an input-referred noise current (INRC) of 0.78-μ A rms, an averaged INRC density of 6.4 pA/√Hz, consumes 11.4 mW of power, and provides 87-dB Ω transimpedance gain with a 14.2-GHz bandwidth. The simulated TIA performance closely matches the results predicted by the design methodology, validating its accuracy and effectiveness. A prototype optical receiver featuring this AFE was fabricated in a 22-nm process and measured to achieve an OMA sensitivity of -11.6 dBm with an energy efficiency of 0.55 pJ/bit at a data rate of 40 Gb/s.
KW - CMOS
KW - design methodology
KW - duobinary
KW - optical receiver
KW - transimpedance amplifier (TIA)
KW - two-port networks
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U2 - 10.1109/OJSSCS.2024.3510478
DO - 10.1109/OJSSCS.2024.3510478
M3 - Article
AN - SCOPUS:85211486491
SN - 2644-1349
VL - 4
SP - 328
EP - 339
JO - IEEE Open Journal of the Solid-State Circuits Society
JF - IEEE Open Journal of the Solid-State Circuits Society
ER -