A -106dBm 33nW Bit-Level Duty-Cycled Tuned RF Wake-up Receiver

Jesse Moody, Anjana Dissanayake, Henry Bishop, Ruochen Lu, Ningxi Liu, Divya Duvvuri, Anming Gao, Daniel Truesdell, N. Scott Barker, Songbin Gong, Benton H. Calhoun, Steven M. Bowers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work presents a 33 nW wake-up receiver with -106 dBm sensitivity at 428 MHz. Within-bit duty cycling allows RF gain at nano-watt DC power levels providing 26 dB sensitivity improvement over prior art at iso-power. An RF MEMS filter and an automatic gain and offset control loop suppress noise and reject interference. The receiver can be digitally tuned across DC power, latency, and sensitivity to provide flexible functionality from indoor short range to outdoor long-range applications.

Original languageEnglish (US)
Title of host publication2019 Symposium on VLSI Circuits, VLSI Circuits 2019 - Digest of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesC86-C87
ISBN (Electronic)9784863487185
DOIs
StatePublished - Jun 2019
Event33rd Symposium on VLSI Circuits, VLSI Circuits 2019 - Kyoto, Japan
Duration: Jun 9 2019Jun 14 2019

Publication series

NameIEEE Symposium on VLSI Circuits, Digest of Technical Papers
Volume2019-June

Conference

Conference33rd Symposium on VLSI Circuits, VLSI Circuits 2019
CountryJapan
CityKyoto
Period6/9/196/14/19

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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