A 10-Gbps in0.53Ga0.47As p-i-n photodiode receiver on metamorphic InGaP buffered GaAs substrate

Yu Sheng Liao, Gong Ru Lin, Hao Chung Kuo, Kai Ming Feng, Milton Feng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In0.53Ga0.47As p-i-n photodiode based OC-192 receiver grown on linearly graded metamorphic InxGa1-xP buffered GaAs with ultra-low dark current of 3.6fA/μm2, switching response of 41ps, bitor-rate of 10-12, and sensitivity of-19dBm are reported.

Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
DOIs
StatePublished - Dec 1 2006
EventConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 - Long Beach, CA, United States
Duration: May 21 2006May 26 2006

Publication series

NameConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

Other

OtherConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
CountryUnited States
CityLong Beach, CA
Period5/21/065/26/06

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

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    Liao, Y. S., Lin, G. R., Kuo, H. C., Feng, K. M., & Feng, M. (2006). A 10-Gbps in0.53Ga0.47As p-i-n photodiode receiver on metamorphic InGaP buffered GaAs substrate. In Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 [4627958] (Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006). https://doi.org/10.1109/CLEO.2006.4627958