A 10-Gbps in0.53Ga0.47As p-i-n photodiode receiver on metamorphic InGaP buffered GaAs substrate

Yu Sheng Liao; Gong Ru Lin; Hao Chung Kuo; Kai Ming Feng; Milton Feng

doi:10.1109/CLEO.2006.4627958

A 10-Gbps in_0.53Ga_0.47As p-i-n photodiode receiver on metamorphic InGaP buffered GaAs substrate

Yu Sheng Liao, Gong Ru Lin, Hao Chung Kuo, Kai Ming Feng, Milton Feng

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In_0.53Ga_0.47As p-i-n photodiode based OC-192 receiver grown on linearly graded metamorphic In_xGa_1-xP buffered GaAs with ultra-low dark current of 3.6fA/μm², switching response of 41ps, bitor-rate of 10^-12, and sensitivity of-19dBm are reported.

Original language	English (US)
Title of host publication	Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
DOIs	https://doi.org/10.1109/CLEO.2006.4627958
State	Published - 2006
Event	Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 - Long Beach, CA, United States Duration: May 21 2006 → May 26 2006

Publication series

Name	Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

Other

Other	Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
Country/Territory	United States
City	Long Beach, CA
Period	5/21/06 → 5/26/06

ASJC Scopus subject areas

Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics

Online availability

10.1109/CLEO.2006.4627958

Library availability

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Cite this

Liao, Y. S., Lin, G. R., Kuo, H. C., Feng, K. M., & Feng, M. (2006). A 10-Gbps in_0.53Ga_0.47As p-i-n photodiode receiver on metamorphic InGaP buffered GaAs substrate. In Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 [4627958] (Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006). https://doi.org/10.1109/CLEO.2006.4627958

A 10-Gbps in_0.53Ga_0.47As p-i-n photodiode receiver on metamorphic InGaP buffered GaAs substrate. / Liao, Yu Sheng; Lin, Gong Ru; Kuo, Hao Chung et al.

Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006. 2006. 4627958 (Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liao, YS, Lin, GR, Kuo, HC, Feng, KM & Feng, M 2006, A 10-Gbps in_0.53Ga_0.47As p-i-n photodiode receiver on metamorphic InGaP buffered GaAs substrate. in Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006., 4627958, Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006, Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006, Long Beach, CA, United States, 5/21/06. https://doi.org/10.1109/CLEO.2006.4627958

Liao YS, Lin GR, Kuo HC, Feng KM, Feng M. A 10-Gbps in_0.53Ga_0.47As p-i-n photodiode receiver on metamorphic InGaP buffered GaAs substrate. In Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006. 2006. 4627958. (Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006). doi: 10.1109/CLEO.2006.4627958

Liao, Yu Sheng ; Lin, Gong Ru ; Kuo, Hao Chung et al. / A 10-Gbps in_0.53Ga_0.47As p-i-n photodiode receiver on metamorphic InGaP buffered GaAs substrate. Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006. 2006. (Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006).

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title = "A 10-Gbps in0.53Ga0.47As p-i-n photodiode receiver on metamorphic InGaP buffered GaAs substrate",

abstract = "In0.53Ga0.47As p-i-n photodiode based OC-192 receiver grown on linearly graded metamorphic InxGa1-xP buffered GaAs with ultra-low dark current of 3.6fA/μm2, switching response of 41ps, bitor-rate of 10-12, and sensitivity of-19dBm are reported.",

author = "Liao, {Yu Sheng} and Lin, {Gong Ru} and Kuo, {Hao Chung} and Feng, {Kai Ming} and Milton Feng",

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