@inproceedings{1b88f2eae7c74f8da19eef1afbe5000b,
title = "A 10-Gbps in0.53Ga0.47As p-i-n photodiode receiver on metamorphic InGaP buffered GaAs substrate",
abstract = "In0.53Ga0.47As p-i-n photodiode based OC-192 receiver grown on linearly graded metamorphic InxGa1-xP buffered GaAs with ultra-low dark current of 3.6fA/μm2, switching response of 41ps, bitor-rate of 10-12, and sensitivity of-19dBm are reported.",
author = "Liao, {Yu Sheng} and Lin, {Gong Ru} and Kuo, {Hao Chung} and Feng, {Kai Ming} and Milton Feng",
year = "2006",
doi = "10.1109/CLEO.2006.4627958",
language = "English (US)",
isbn = "1557528136",
series = "Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006",
booktitle = "Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006",
note = "Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 ; Conference date: 21-05-2006 Through 26-05-2006",
}