Abstract
Integrators are key building blocks in many analog signal processing circuits and systems. They are typically implemented using either an opamp-RC or a G m-C architecture depending on bandwidth and linearity requirements. The performance of both these topologies depends on the operational transconductance amplifier (OTA) used to implement the integrator. Reduced supply voltage and lower transistor output impedance make it difficult to implement high-gain wide-bandwidth OTAs in a power-efficient manner. Consequently, the DC gain of the integrator is often severely limited when designed in deep-submicron CMOS processes. Conventional integrators employ multi-stage OTAs operating in weak inversion and forward body biasing to achieve large DC gain at low supply voltages [1]. These techniques require automatic biasing to guarantee robust operation under all conditions and the use of frequency compensation combined with large dimensions needed to bias the transistors in weak inversion severely limits the bandwidth and increases power dissipation. In this paper, we propose a ring-oscillator-based integrator (ROI) that seeks to overcome the limitations of conventional OTA-based integrators.
Original language | English (US) |
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Title of host publication | 2012 IEEE International Solid-State Circuits Conference, ISSCC 2012 - Digest of Technical Papers |
Pages | 360-361 |
Number of pages | 2 |
Volume | 55 |
DOIs | |
State | Published - 2012 |
Externally published | Yes |
Event | 59th International Solid-State Circuits Conference, ISSCC 2012 - San Francisco, CA, United States Duration: Feb 19 2012 → Feb 23 2012 |
Other
Other | 59th International Solid-State Circuits Conference, ISSCC 2012 |
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Country/Territory | United States |
City | San Francisco, CA |
Period | 2/19/12 → 2/23/12 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering