A 0.55V 61dB-SNR 67dB-SFDR 7MHz 4 th-order Butterworth filter using ring-oscillator-based integrators in 90nm CMOS

Brian Drost, Mrunmay Talegaonkar, Pavan Kumar Hanumolu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Integrators are key building blocks in many analog signal processing circuits and systems. They are typically implemented using either an opamp-RC or a G m-C architecture depending on bandwidth and linearity requirements. The performance of both these topologies depends on the operational transconductance amplifier (OTA) used to implement the integrator. Reduced supply voltage and lower transistor output impedance make it difficult to implement high-gain wide-bandwidth OTAs in a power-efficient manner. Consequently, the DC gain of the integrator is often severely limited when designed in deep-submicron CMOS processes. Conventional integrators employ multi-stage OTAs operating in weak inversion and forward body biasing to achieve large DC gain at low supply voltages [1]. These techniques require automatic biasing to guarantee robust operation under all conditions and the use of frequency compensation combined with large dimensions needed to bias the transistors in weak inversion severely limits the bandwidth and increases power dissipation. In this paper, we propose a ring-oscillator-based integrator (ROI) that seeks to overcome the limitations of conventional OTA-based integrators.

Original languageEnglish (US)
Title of host publication2012 IEEE International Solid-State Circuits Conference, ISSCC 2012 - Digest of Technical Papers
Pages360-361
Number of pages2
DOIs
StatePublished - 2012
Externally publishedYes
Event59th International Solid-State Circuits Conference, ISSCC 2012 - San Francisco, CA, United States
Duration: Feb 19 2012Feb 23 2012

Publication series

NameDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume55
ISSN (Print)0193-6530

Other

Other59th International Solid-State Circuits Conference, ISSCC 2012
Country/TerritoryUnited States
CitySan Francisco, CA
Period2/19/122/23/12

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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