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  • Milton Feng
2010

An InP VCO with static frequency divider for millimeter wave clock generation

Stuenkel, M. & Feng, M., 2010, 2010 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Technical Digest 2010. 5619658

Research output: Chapter in Book/Report/Conference proceedingConference contribution

A wideband high-linearity mixer in 0.5 μm InP DHBT technology

Stuenkel, M. & Feng, M., Jul 16 2010, Proceedings of the 2010 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2010. p. 525-528 4 p. 10.1109/RFIC.2010.5477287. (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Design and layout of multi ghz operation of light emitting diodes

Wu, C. H., Walter, G., Then, H. W. & Feng, M., 2010, 2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Design and operation of distributed feedback transistor lasers

Dixon, F., Feng, M. & Holonyak, N., Nov 1 2010, In : Journal of Applied Physics. 108, 9, 093109.

Research output: Contribution to journalArticle

Development of 90nm InGaAs HEMTs and benchmarking logic performance with Si CMOS

Cheng, K. Y., Chan, D., Tan, F., Xu, H., Feng, M., Ko, C. H. & Wann, C., 2010, 2010 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Technical Digest 2010. 5619674. (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Distributed feedback transistor laser

Dixon, F., Feng, M. & Holonyak, N., Jun 14 2010, In : Applied Physics Letters. 96, 24, 241103.

Research output: Contribution to journalArticle

Distributed modeling of layout parasitics effects in CMOS power devices

Chan, D. A. & Feng, M., 2010, European Microwave Week 2010: Connecting the World, EuMIC 2010 - Conference Proceedings. p. 242-245 4 p. 5613699

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Drifting-dipole noise (DDN) model of MOSFETs for microwave circuit design

Nguyen, G. D. & Feng, M., Dec 1 2010, In : IEEE Transactions on Microwave Theory and Techniques. 58, 12 PART 1, p. 3433-3443 11 p., 5595520.

Research output: Contribution to journalArticle

Microwave characterization of Purcell enhancement in a microcavity laser

Then, H. W., Wu, C. H., Feng, M. & Holonyak, N., Apr 12 2010, In : Applied Physics Letters. 96, 13, 131107.

Research output: Contribution to journalArticle

Microwave circuit model of the three-port transistor laser

Then, H. W., Feng, M. & Holonyak, N., May 1 2010, In : Journal of Applied Physics. 107, 9, 094509.

Research output: Contribution to journalArticle

Microwave determination of electron-hole recombination dynamics from spontaneous to stimulated emission in a quantum-well microcavity laser

Wu, C. H., Then, H. W., Feng, M. & Holonyak, N., Apr 12 2010, In : Applied Physics Letters. 96, 13, 131108.

Research output: Contribution to journalArticle

Physics of base charge dynamics in the three port transistor laser

Then, H. W., Feng, M. & Holonyak, N., Mar 26 2010, In : Applied Physics Letters. 96, 11, 113509.

Research output: Contribution to journalArticle

Stochastic base doping and quantum-well enhancement of recombination in an n-p-n light-emitting transistor or transistor laser

Then, H. W., Wu, C. H., Feng, M., Holonyak, N. & Walter, G., Jun 28 2010, In : Applied Physics Letters. 96, 26, 263505.

Research output: Contribution to journalArticle

Sub-100 nm gate III-V MOSFET for digital applications

Cheng, K. Y., Feng, M., Cheng, D. & Liao, C., Dec 1 2010, Fundamentals of III-V Semiconductor MOSFETs. Springer US, p. 285-305 21 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

The effect of mode spacing on the speed of quantum-well microcavity lasers

Wu, C. H., Tan, F., Feng, M. & Holonyak, N., Aug 30 2010, In : Applied Physics Letters. 97, 9, 091103.

Research output: Contribution to journalArticle

2011

Bandfilling and photon-assisted tunneling in a quantum-well transistor laser

Feng, M., Bambery, R. & Holonyak, N., Mar 21 2011, In : Applied Physics Letters. 98, 12, 123505.

Research output: Contribution to journalArticle

Base charge accumulation and push-out effects on nonlinearity of Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP double heterojunction bipolar transistors

Cheng, K. Y., Xu, H., Stuenkel, M. E., Iverson, E. W., Liao, C. C., Yang, K. W., Feng, M. & Cheng, K. Y., Dec 1 2011, In : Journal of Applied Physics. 110, 11, 113703.

Research output: Contribution to journalArticle

Doping-dependent device functionality of InP/InAlGaAs long-wavelength light-emitting transistors

Huang, Y., Ryou, J. H., Dupuis, R. D., Dixon, F., Feng, M., Holonyak, N. & Kuciauskas, D., Sep 5 2011, In : Applied Physics Letters. 99, 10, 103502.

Research output: Contribution to journalArticle

Energy efficient microcavity lasers with 20 and 40 Gb/s data transmission

Tan, F., Wu, C. H., Feng, M. & Holonyak, N., May 9 2011, In : Applied Physics Letters. 98, 19, 191107.

Research output: Contribution to journalArticle

Hot electron injection effect on the microwave performance of type-I/II AlInP/GaAsSb/InP double-heterojunction bipolar transistors

Cheng, K. Y. D., Liao, C. C., Xu, H., Cheng, K. Y. N. & Feng, M., Jun 13 2011, In : Applied Physics Letters. 98, 24, 242103.

Research output: Contribution to journalArticle

InP/InAlGaAs light-emitting transistors and transistor lasers with a carbon-doped base layer

Huang, Y., Ryou, J. H., Dupuis, R. D., Dixon, F., Feng, M. & Holonyak, N., Mar 15 2011, In : Journal of Applied Physics. 109, 6, 063106.

Research output: Contribution to journalArticle

Temperature dependence of a high-performance narrow-stripe (1 μm) single quantum-well transistor laser

Feng, M., Holonyak, N. & James, A., Jan 31 2011, In : Applied Physics Letters. 98, 5, 051107.

Research output: Contribution to journalArticle

The effect of microcavity laser recombination lifetime on microwave bandwidth and eye-diagram signal integrity

Wu, C. H., Tan, F., Wu, M. K., Feng, M. & Holonyak, N., Mar 1 2011, In : Journal of Applied Physics. 109, 5, 053112.

Research output: Contribution to journalArticle

The Metamorphosis of the Transistor into a Laser

Feng, M. & Holonyak, N., Mar 2011, Optics and Photonics News, 22, 3, p. 45-49 5 p.

Research output: Contribution to specialist publicationArticle

The transistor laser

Feng, M. & Holonyak, N., Sep 6 2011, 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011. 5942547. (2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Transistor laser with simultaneous electrical and optical output at 20 and 40 Gb/s data rate modulation

Tan, F., Bambery, R., Feng, M. & Holonyak, N., Aug 8 2011, In : Applied Physics Letters. 99, 6, 061105.

Research output: Contribution to journalArticle

Type-ii dhbts microwave characterization and metallization issues

Cheng, K. Y. & Feng, M., Dec 1 2011, 2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011. (2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

W-band monolithic CPW Wilkinson CMOS power amplifier

Chan, D. A. & Feng, M., Mar 30 2011, 2011 IEEE Radio and Wireless Week, RWW 2011 - 2011 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2011. p. 33-36 4 p. 5725385. (2011 IEEE Radio and Wireless Week, RWW 2011 - 2011 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2011).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2012

A W-Band tunable Push-Push oscillator with 128X frequency division for frequency synthesis applications

Stuenkel, M. & Feng, M., 2012, IMS 2012 - 2012 IEEE MTT-S International Microwave Symposium. 6259709

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Non-linearity characterization of submicron Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP DHBTs

Xu, H., Iverson, E., Cheng, K. Y., Stuenkel, M. & Feng, M., Dec 1 2012, 2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012. (2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Physical origins of nonlinearity in InP double heterojunction bipolar transistors

Xu, H., Iverson, E. W., Cheng, K. Y. & Feng, M., Mar 12 2012, In : Applied Physics Letters. 100, 11, 113508.

Research output: Contribution to journalArticle

Relative intensity noise of a quantum well transistor laser

Tan, F., Bambery, R., Feng, M. & Holonyak, N., Oct 8 2012, In : Applied Physics Letters. 101, 15, 151118.

Research output: Contribution to journalArticle

Surface emission vertical cavity transistor laser

Wu, M. K., Feng, M. & Holonyak, N., Jul 23 2012, In : IEEE Photonics Technology Letters. 24, 15, p. 1346-1348 3 p., 6214571.

Research output: Contribution to journalArticle

Transistor laser optical and electrical linearity enhancement with collector current feedback

Then, H. W., Tan, F., Feng, M. & Holonyak, N., May 28 2012, In : Applied Physics Letters. 100, 22, 221104.

Research output: Contribution to journalArticle

Transistor laser power stabilization using direct collector current feedback control

Iverson, E. W. & Feng, M., Jan 1 2012, In : IEEE Photonics Technology Letters. 24, 1, p. 4-6 3 p., 6043864.

Research output: Contribution to journalArticle

Voltage modulation of a vertical cavity transistor laser via intra-cavity photon-assisted tunneling

Wu, M. K., Feng, M. & Holonyak, N., Aug 20 2012, In : Applied Physics Letters. 101, 8, 081102.

Research output: Contribution to journalArticle

2013

50Th anniversary of the light-emitting diode (led): An ultimate lamp [scanning the issue]

Craford, M. G., Dupuis, R. D., Feng, M., Kish, F. A. & Laskar, J., Jan 1 2013, In : Proceedings of the IEEE. 101, 10, p. 2154-2157 4 p., 6600904.

Research output: Contribution to journalArticle

Composition-graded AlInP/AlGaAsSb/InP type-II DHBTs with f T/fMAX = 450/510GHz

Xu, H., Iverson, E. W., Liao, C. C., Cheng, K. Y. & Feng, M., Jan 1 2013, In : IEEE Electron Device Letters. 34, 1, p. 33-35 3 p., 6361454.

Research output: Contribution to journalArticle

Improvement in enhanced spontaneous emission of resonant cavity light emitting transistors via inductively coupled plasma etching top distributed bragg reflector

Wu, M. K., Liu, M. & Feng, M., Nov 15 2013, 2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013. p. 279-282 4 p. (2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lateral feeding design and selective oxidation process in vertical cavity transistor laser

Liu, M., Wu, M. K., Feng, M. & Holonyak, N., Oct 28 2013, In : Journal of Applied Physics. 114, 16, 163104.

Research output: Contribution to journalArticle

Relative intensity noise in high speed microcavity laser

Tan, F., Wu, M. K., Liu, M., Feng, M. & Holonyak, N., Oct 21 2013, In : Applied Physics Letters. 103, 14, 141116.

Research output: Contribution to journalArticle

Selective oxidization cavity confinement for low threshold vertical cavity transistor laser

Wu, M. K., Liu, M., Tan, F., Feng, M. & Holonyak, N., Jul 1 2013, In : Applied Physics Letters. 103, 1, 011104.

Research output: Contribution to journalArticle

The effect of ground and first excited state transitions on transistor laser relative intensity noise

Tan, F., Xu, W., Huang, X., Feng, M. & Holonyak, N., Feb 25 2013, In : Applied Physics Letters. 102, 8, 081103.

Research output: Contribution to journalArticle

The transistor laser: Theory and experiment

Then, H. W., Feng, M. & Holonyak, N., Jan 1 2013, In : Proceedings of the IEEE. 101, 10, p. 2271-2298 28 p., 6587527.

Research output: Contribution to journalArticle

Transistor laser for electronic-photonic integrated circuits

Feng, M. & Holonyak, N., Nov 8 2013, 2013 IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2013 - Technical Digest 2013. 6659247. (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Voltage and current modulation at 20 Gb/s of a transistor laser at room temperature

Bambery, R., Tan, F., Feng, M., Dallesasse, J. M. & Holonyak, N., May 3 2013, In : IEEE Photonics Technology Letters. 25, 9, p. 859-862 4 p., 6480788.

Research output: Contribution to journalArticle

Wideband coherent optical concentrator for photovoltaic and rectenna solar cells

Bodan, P., Apostolos, J., Mouyos, W., Mcmahon, B., Wu, M. K., Liu, M., Xu, H. & Feng, M., 2013, Optics for Solar Energy, SOLAR 2013. Optical Society of America (OSA), (Optics InfoBase Conference Papers).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yield improvement in fabrication of edge emitting transistor lasers by optimized BCB planarization

Bambery, R. & Feng, M., Nov 15 2013, 2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013. p. 379-382 4 p. (2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2014

0.5 THz performance of a type-II DHBT with a doping-graded and constant-composition GaAsSb base

Xu, H., Wu, B., Iverson, E. W., Low, T. S. & Feng, M., Jan 1 2014, In : IEEE Electron Device Letters. 35, 1, p. 24-26 3 p., 6678780.

Research output: Contribution to journalArticle