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  • Milton Feng
2018

50 Gb/s Error-Free Data Transmission Using a NRZ-OOK Modulated 850 nm VCSEL

Wu, C. H., Huang, T. Y., Qiu, J., Fu, W., Peng, C. Y., Shih, T. T., Huang, J. J., Kuo, H. C., Lin, G. R., Cheng, W. H., Feng, M. & Wu, C. H., Nov 14 2018, 2018 European Conference on Optical Communication, ECOC 2018. Institute of Electrical and Electronics Engineers Inc., 8535442. (European Conference on Optical Communication, ECOC; vol. 2018-September).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2014

Optimization of selective oxidation for 850 nm (IR) and 780 nm (far-red) energy/data efficient oxide-confined microcavity VCSELs

Liu, M., Wu, M. K. & Feng, M., Jan 1 2014, p. 79-82. 4 p.

Research output: Contribution to conferencePaper

2010

Design and operation of distributed feedback transistor lasers

Dixon, F., Feng, M. & Holonyak, N., Nov 1 2010, In : Journal of Applied Physics. 108, 9, 093109.

Research output: Contribution to journalArticle

2013

Voltage and current modulation at 20 Gb/s of a transistor laser at room temperature

Bambery, R., Tan, F., Feng, M., Dallesasse, J. M. & Holonyak, N., May 3 2013, In : IEEE Photonics Technology Letters. 25, 9, p. 859-862 4 p., 6480788.

Research output: Contribution to journalArticle

2010

Stochastic base doping and quantum-well enhancement of recombination in an n-p-n light-emitting transistor or transistor laser

Then, H. W., Wu, C. H., Feng, M., Holonyak, N. & Walter, G., Jun 28 2010, In : Applied Physics Letters. 96, 26, 263505.

Research output: Contribution to journalArticle

2015

Vertical cavity transistor laser for on-chip OICs

Feng, M., Liu, M., Wang, C. & Holonyak, N., Sep 9 2015, 2015 IEEE Summer Topicals Meeting Series, SUM 2015. Institute of Electrical and Electronics Engineers Inc., p. 146-147 2 p. 7248238. (2015 IEEE Summer Topicals Meeting Series, SUM 2015).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2014

Transistor laser with 13.5-Gb/s error-free data transmission

Tan, F., Bambery, R., Feng, M. & Holonyak, N., Aug 1 2014, In : IEEE Photonics Technology Letters. 26, 15, p. 1542-1545 4 p., 6827167.

Research output: Contribution to journalArticle

2011

The effect of microcavity laser recombination lifetime on microwave bandwidth and eye-diagram signal integrity

Wu, C. H., Tan, F., Wu, M. K., Feng, M. & Holonyak, N., Mar 1 2011, In : Journal of Applied Physics. 109, 5, 053112.

Research output: Contribution to journalArticle

2018

Electro-Optical Bistability in Semiconductor Laser

Wang, C., Feng, M. & Holonyak, N., Aug 6 2018, 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 8428156. (2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2015

Metamorphosis of the transistor into a laser

Feng, M. & Holonyak, N., Jan 1 2015, In : EPL. 109, 1

Research output: Contribution to journalArticle

2010

Physics of base charge dynamics in the three port transistor laser

Then, H. W., Feng, M. & Holonyak, N., Mar 26 2010, In : Applied Physics Letters. 96, 11, 113509.

Research output: Contribution to journalArticle

2011

Bandfilling and photon-assisted tunneling in a quantum-well transistor laser

Feng, M., Bambery, R. & Holonyak, N., Mar 21 2011, In : Applied Physics Letters. 98, 12, 123505.

Research output: Contribution to journalArticle

2018

85°C operation of 850 nm VCSELs deliver a 42 Gb/s error- free data transmission for 100 meter MMF Link

Wang, H. L., Qiu, J., Yu, X., Feng, M. & Holonyak, N., Jan 1 2018, Optical Fiber Communication Conference, OFC 2018. OSA - The Optical Society, W1I.6. (Optics InfoBase Conference Papers; vol. Part F84-OFC 2018).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2019

Direct Tunneling Modulation of Semiconductor Lasers

Qiu, J., Feng, M. & Holonyak, N., May 2019, 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 8749687. (2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2018

Direct and photon-assisted tunneling in resonant-cavity quantum-well light-emitting transistors

Qiu, J., Wang, C. Y., Feng, M. & Holonyak, N., Dec 21 2018, In : Journal of Applied Physics. 124, 23, 234501.

Research output: Contribution to journalArticle

2016

Microwave extraction method of radiative recombination and photon lifetimes up to 85 °C on 50 Gb/s oxide-vertical cavity surface emitting laser

Wang, C. Y., Liu, M., Feng, M. & Holonyak, N., Dec 14 2016, In : Journal of Applied Physics. 120, 22, 223103.

Research output: Contribution to journalArticle

2013

Wideband coherent optical concentrator for photovoltaic and rectenna solar cells

Bodan, P., Apostolos, J., Mouyos, W., Mcmahon, B., Wu, M. K., Liu, M., Xu, H. & Feng, M., 2013, Optics for Solar Energy, SOLAR 2013. Optical Society of America (OSA), (Optics InfoBase Conference Papers).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2010

The effect of mode spacing on the speed of quantum-well microcavity lasers

Wu, C. H., Tan, F., Feng, M. & Holonyak, N., Aug 30 2010, In : Applied Physics Letters. 97, 9, 091103.

Research output: Contribution to journalArticle

2011

Hot electron injection effect on the microwave performance of type-I/II AlInP/GaAsSb/InP double-heterojunction bipolar transistors

Cheng, K. Y. D., Liao, C. C., Xu, H., Cheng, K. Y. N. & Feng, M., Jun 13 2011, In : Applied Physics Letters. 98, 24, 242103.

Research output: Contribution to journalArticle

2019

Reconfigurable 43 Gb/s optical link test based upon on-wafer probes of GaAs photodetectors and VCSELs up to 85°C

Peng, Y. T., Qiu, J., Wu, D. & Feng, M., Jan 1 2019.

Research output: Contribution to conferencePaper

2017

Room temperature operation of electro-optical bistability in the edge-emitting tunneling-collector transistor laser

Feng, M., Holonyak, N. & Wang, C. Y., Sep 14 2017, In : Journal of Applied Physics. 122, 10, 103102.

Research output: Contribution to journalArticle

2013

Composition-graded AlInP/AlGaAsSb/InP type-II DHBTs with f T/fMAX = 450/510GHz

Xu, H., Iverson, E. W., Liao, C. C., Cheng, K. Y. & Feng, M., Jan 1 2013, In : IEEE Electron Device Letters. 34, 1, p. 33-35 3 p., 6361454.

Research output: Contribution to journalArticle

2018

Electro-optical bistability in semiconductor laser

Wang, C., Feng, M. & Holonyak, N., Jan 1 2018, CLEO: Science and Innovations, CLEO_SI 2018. OSA - The Optical Society, (Optics InfoBase Conference Papers; vol. Part F94-CLEO_SI 2018).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2010

A wideband high-linearity mixer in 0.5 μm InP DHBT technology

Stuenkel, M. & Feng, M., Jul 16 2010, Proceedings of the 2010 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2010. p. 525-528 4 p. 10.1109/RFIC.2010.5477287. (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2014

A 0.05-26 GHz direct conversion I/Q modulator MMIC

Iverson, E. W. & Feng, M., Dec 5 2014, Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC. Institute of Electrical and Electronics Engineers Inc., 6978527. (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2010

Drifting-dipole noise (DDN) model of MOSFETs for microwave circuit design

Nguyen, G. D. & Feng, M., Dec 1 2010, In : IEEE Transactions on Microwave Theory and Techniques. 58, 12 PART 1, p. 3433-3443 11 p., 5595520.

Research output: Contribution to journalArticle

2016

Nonalloyed refractory metals for self-aligned InP HBT emitter contacts with InAs/InGaAs emitter cap

Winoto, A., Qiu, J. & Feng, M., Jan 1 2016, p. 247-250. 4 p.

Research output: Contribution to conferencePaper

2013

Selective oxidization cavity confinement for low threshold vertical cavity transistor laser

Wu, M. K., Liu, M., Tan, F., Feng, M. & Holonyak, N., Jul 1 2013, In : Applied Physics Letters. 103, 1, 011104.

Research output: Contribution to journalArticle

2011

InP/InAlGaAs light-emitting transistors and transistor lasers with a carbon-doped base layer

Huang, Y., Ryou, J. H., Dupuis, R. D., Dixon, F., Feng, M. & Holonyak, N., Mar 15 2011, In : Journal of Applied Physics. 109, 6, 063106.

Research output: Contribution to journalArticle

2013

The effect of ground and first excited state transitions on transistor laser relative intensity noise

Tan, F., Xu, W., Huang, X., Feng, M. & Holonyak, N., Feb 25 2013, In : Applied Physics Letters. 102, 8, 081103.

Research output: Contribution to journalArticle

2019

Optical NOR Gate Transistor Laser Integrated Circuit

Winoto, A., Qiu, J., Wu, D. & Feng, M., May 2019, 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 8749236. (2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2011

W-band monolithic CPW Wilkinson CMOS power amplifier

Chan, D. A. & Feng, M., Mar 30 2011, 2011 IEEE Radio and Wireless Week, RWW 2011 - 2011 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2011. p. 33-36 4 p. 5725385. (2011 IEEE Radio and Wireless Week, RWW 2011 - 2011 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2011).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Type-ii dhbts microwave characterization and metallization issues

Cheng, K. Y. & Feng, M., Dec 1 2011, 2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011. (2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2016

Microwave equivalent circuit modeling of 29 GHz modulated 850 nm oxide-confined VCSELs

Wang, C. Y., Liu, M., Tan, F. & Feng, M., Jan 1 2016, p. 337-340. 4 p.

Research output: Contribution to conferencePaper

2013

Relative intensity noise in high speed microcavity laser

Tan, F., Wu, M. K., Liu, M., Feng, M. & Holonyak, N., Oct 21 2013, In : Applied Physics Letters. 103, 14, 141116.

Research output: Contribution to journalArticle

2011
2019

VCSEL with Bi-Layer Oxidized Aperture Enables 140-Gbit/s OFDM Transmission over 100-m-Long OM5 MMF

Wu, W. L., Huang, C. Y., Wang, H. Y., Lin, Y. H., Wu, C. H., Kuo, H. C., Cheng, W. H., Wu, C. H., Feng, M. & Lin, G. R., Apr 22 2019, Optical Fiber Communication Conference, OFC 2019. OSA - The Optical Society, OFC-2019-Tu3A.3. (Optics InfoBase Conference Papers; vol. Part F160-OFC 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2014

Low power operation of a vertical cavity transistor laser via the reduction of collector offset voltage

Wu, M. K., Liu, M., Bambery, R., Feng, M. & Holonyak, N., May 15 2014, In : IEEE Photonics Technology Letters. 26, 10, p. 1003-1006 4 p., 6777534.

Research output: Contribution to journalArticle

2016

Intra-cavity photon-assisted tunneling collector-base voltage-mediated electron-hole spontaneous-stimulated recombination transistor laser

Feng, M., Qiu, J., Wang, C. Y. & Holonyak, N., Feb 28 2016, In : Journal of Applied Physics. 119, 8, 084502.

Research output: Contribution to journalArticle

2011

Base charge accumulation and push-out effects on nonlinearity of Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP double heterojunction bipolar transistors

Cheng, K. Y., Xu, H., Stuenkel, M. E., Iverson, E. W., Liao, C. C., Yang, K. W., Feng, M. & Cheng, K. Y., Dec 1 2011, In : Journal of Applied Physics. 110, 11, 113703.

Research output: Contribution to journalArticle

2013

Transistor laser for electronic-photonic integrated circuits

Feng, M. & Holonyak, N., Nov 8 2013, 2013 IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2013 - Technical Digest 2013. 6659247. (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2010

Microwave determination of electron-hole recombination dynamics from spontaneous to stimulated emission in a quantum-well microcavity laser

Wu, C. H., Then, H. W., Feng, M. & Holonyak, N., Apr 12 2010, In : Applied Physics Letters. 96, 13, 131108.

Research output: Contribution to journalArticle

2014

Effect of the energy barrier in the base of the transistor laser on the recombination lifetime

Bambery, R., Wang, C., Dallesasse, J. M., Feng, M. & Holonyak, N., Jan 1 2014, In : Applied Physics Letters. 104, 8, 081117.

Research output: Contribution to journalArticle

2017

Temperature dependent analysis of 50 Gb/s oxide-confined VCSELs

Wang, C. Y., Liu, M., Feng, M. & Holonyak, N., Jan 1 2017, Optical Fiber Communication Conference, OFC 2017. OSA - The Optical Society, (Optics InfoBase Conference Papers; vol. Part F40-OFC 2017).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2011

The Metamorphosis of the Transistor into a Laser

Feng, M. & Holonyak, N., Mar 2011, Optics and Photonics News, 22, 3, p. 45-49 5 p.

Research output: Contribution to specialist publicationArticle

Transistor laser with simultaneous electrical and optical output at 20 and 40 Gb/s data rate modulation

Tan, F., Bambery, R., Feng, M. & Holonyak, N., Aug 8 2011, In : Applied Physics Letters. 99, 6, 061105.

Research output: Contribution to journalArticle

2013

The transistor laser: Theory and experiment

Then, H. W., Feng, M. & Holonyak, N., Jan 1 2013, In : Proceedings of the IEEE. 101, 10, p. 2271-2298 28 p., 6587527.

Research output: Contribution to journalArticle

2017

Electro-optical hysteresis and bistability in the ring-cavity tunneling-collector transistor laser

Feng, M., Holonyak, N., Wu, M. K. & Tan, F., Apr 21 2017, In : Journal of Applied Physics. 121, 15, 153103.

Research output: Contribution to journalArticle

2010

Distributed feedback transistor laser

Dixon, F., Feng, M. & Holonyak, N., Jun 14 2010, In : Applied Physics Letters. 96, 24, 241103.

Research output: Contribution to journalArticle

2014

Quantum-well transistor laser for optical interconnect and photonic integrated circuits

Feng, M., Then, H. W., Tan, F., Wu, M. K., Bambery, R. & Holonyak, N., Dec 9 2014, 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014. Institute of Electrical and Electronics Engineers Inc., p. 115-122 8 p. 6981297. (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting).

Research output: Chapter in Book/Report/Conference proceedingConference contribution