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2019

Direct tunneling modulation of semiconductor lasers

Qiu, J., Feng, M. & Holonyak, N., Jan 1 2019, CLEO: Applications and Technology, CLEO_AT 2019. OSA - The Optical Society, (Optics InfoBase Conference Papers; vol. Part F127-CLEO_AT 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Semiconductor lasers
Photons
Modulation
Semiconductor quantum wells
Transistors
2012

Physical origins of nonlinearity in InP double heterojunction bipolar transistors

Xu, H., Iverson, E. W., Cheng, K. Y. & Feng, M., Mar 12 2012, In : Applied Physics Letters. 100, 11, 113508.

Research output: Contribution to journalArticle

bipolar transistors
heterojunctions
nonlinearity
energy bands
alignment
2016

Inductively coupled plasma dry etching process development for > 50 Gb/s 850 nm oxide-confined VCSELs

Liu, M., Wang, C. Y. & Feng, M., Jan 1 2016, p. 101-104. 4 p.

Research output: Contribution to conferencePaper

Dry etching
Plasma etching
Surface emitting lasers
Inductively coupled plasma
Etching
2010

An InP VCO with static frequency divider for millimeter wave clock generation

Stuenkel, M. & Feng, M., 2010, 2010 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2010 - Technical Digest 2010. 5619658

Research output: Chapter in Book/Report/Conference proceedingConference contribution

frequency dividers
voltage controlled oscillators
Variable frequency oscillators
Millimeter waves
millimeter waves
2017

Temperature dependent analysis of 50 Gb/s oxide-confined VCSELs

Wang, C. Y., Liu, M., Feng, M. & Holonyak, N., Jan 1 2017, Optical Fiber Communication Conference, OFC 2017. OSA - The Optical Society, (Optics InfoBase Conference Papers; vol. Part F40-OFC 2017).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Surface emitting lasers
Oxides
Modulation
Bandwidth
Temperature
2010

Microwave circuit model of the three-port transistor laser

Then, H. W., Feng, M. & Holonyak, N., May 1 2010, In : Journal of Applied Physics. 107, 9, 094509.

Research output: Contribution to journalArticle

microwave circuits
transistors
lasers
Kirchhoff law
quantum wells

Design and operation of distributed feedback transistor lasers

Dixon, F., Feng, M. & Holonyak, N., Nov 1 2010, In : Journal of Applied Physics. 108, 9, 093109.

Research output: Contribution to journalArticle

transistors
lasers
continuous wave lasers
bipolar transistors
threshold currents
2014

Surface recombination and performance issues of scaling submicron emitter on Type-II GaAsSb DHBTs

Xu, H., Iverson, E. W., Winoto, A. & Feng, M., Jan 1 2014, p. 211-214. 4 p.

Research output: Contribution to conferencePaper

2013

Voltage and current modulation at 20 Gb/s of a transistor laser at room temperature

Bambery, R., Tan, F., Feng, M., Dallesasse, J. M. & Holonyak, N., May 3 2013, In : IEEE Photonics Technology Letters. 25, 9, p. 859-862 4 p., 6480788.

Research output: Contribution to journalArticle

Transistors
transistors
Modulation
modulation
Lasers
2016

850 nm oxide-confined VCSELs with 50 Gb/s error-free transmission operating up to 85 °c

Liu, M., Wang, C. Y., Feng, M. & Holonyak, N., Dec 16 2016, 2016 Conference on Lasers and Electro-Optics, CLEO 2016. Institute of Electrical and Electronics Engineers Inc., 7788446. (2016 Conference on Lasers and Electro-Optics, CLEO 2016).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Surface emitting lasers
data transmission
Data communication systems
Oxides
bandwidth
2015

Metamorphosis of the transistor into a laser

Feng, M. & Holonyak, N., Jan 1 2015, In : EPL. 109, 1

Research output: Contribution to journalArticle

transistors
lasers
bipolar transistors
accumulators
heterojunctions
2019

850 nm VCSELs for 50 Gb/s NRZ Error-Free Transmission over 100-Meter OM4 and up to 115 °c Operation

Wang, H. L., Fu, W., Qiu, J. & Feng, M., Apr 22 2019, 2019 Optical Fiber Communications Conference and Exhibition, OFC 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 8696328. (2019 Optical Fiber Communications Conference and Exhibition, OFC 2019 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Surface emitting lasers
bandwidth
oxides
Laser modes
Bandwidth
2011

Doping-dependent device functionality of InP/InAlGaAs long-wavelength light-emitting transistors

Huang, Y., Ryou, J. H., Dupuis, R. D., Dixon, F., Feng, M., Holonyak, N. & Kuciauskas, D., Sep 5 2011, In : Applied Physics Letters. 99, 10, 103502.

Research output: Contribution to journalArticle

transistors
wavelengths
zinc
quantum wells
carrier lifetime
2016

Microwave equivalent circuit modeling of 29 GHz modulated 850 nm oxide-confined VCSELs

Wang, C. Y., Liu, M., Tan, F. & Feng, M., Jan 1 2016, p. 337-340. 4 p.

Research output: Contribution to conferencePaper

Microwave circuits
Surface emitting lasers
Equivalent circuits
Bandwidth
Oxides
2011

The effect of microcavity laser recombination lifetime on microwave bandwidth and eye-diagram signal integrity

Wu, C. H., Tan, F., Wu, M. K., Feng, M. & Holonyak, N., Mar 1 2011, In : Journal of Applied Physics. 109, 5, 053112.

Research output: Contribution to journalArticle

integrity
diagrams
bandwidth
modulation
microwaves

Hot electron injection effect on the microwave performance of type-I/II AlInP/GaAsSb/InP double-heterojunction bipolar transistors

Cheng, K. Y. D., Liao, C. C., Xu, H., Cheng, K. Y. N. & Feng, M., Jun 13 2011, In : Applied Physics Letters. 98, 24, 242103.

Research output: Contribution to journalArticle

bipolar transistors
hot electrons
heterojunctions
emitters
injection
2010

Microwave characterization of Purcell enhancement in a microcavity laser

Then, H. W., Wu, C. H., Feng, M. & Holonyak, N., Apr 12 2010, In : Applied Physics Letters. 96, 13, 131107.

Research output: Contribution to journalArticle

microwaves
augmentation
output
surface emitting lasers
frequency response

The effect of mode spacing on the speed of quantum-well microcavity lasers

Wu, C. H., Tan, F., Feng, M. & Holonyak, N., Aug 30 2010, In : Applied Physics Letters. 97, 9, 091103.

Research output: Contribution to journalArticle

quantum well lasers
spacing
surface emitting lasers
cavities
time response
2013

50Th anniversary of the light-emitting diode (led): An ultimate lamp [scanning the issue]

Craford, M. G., Dupuis, R. D., Feng, M., Kish, F. A. & Laskar, J., Sep 30 2013, In : Proceedings of the IEEE. 101, 10, p. 2154-2157 4 p., 6600904.

Research output: Contribution to journalArticle

Electric lamps
Light emitting diodes
Scanning
Industry
2012

Transistor laser optical and electrical linearity enhancement with collector current feedback

Then, H. W., Tan, F., Feng, M. & Holonyak, N., May 28 2012, In : Applied Physics Letters. 100, 22, 221104.

Research output: Contribution to journalArticle

accumulators
linearity
transistors
augmentation
quantum wells
2019
Photonics
Transistors
Lasers
Optical receivers
Wafer bonding
2015

Effect of microcavity size to the RIN and 40 Gb/s data transmission performance of high speed VCSELs

Tan, F., Wu, M. K., Wang, C., Liu, M., Feng, M. & Holonyak, N., Aug 10 2015, 2015 Conference on Lasers and Electro-Optics, CLEO 2015. Institute of Electrical and Electronics Engineers Inc., 7183726. (Conference on Lasers and Electro-Optics Europe - Technical Digest; vol. 2015-August).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Microcavities
Surface emitting lasers
data transmission
Data communication systems
apertures
2019

85C Operation of Single-Mode 850 nm VCSELs for High Speed Error-Free Transmission up to 1 km in OM4 Fiber

Qiu, J., Yu, X. & Feng, M., Apr 22 2019, 2019 Optical Fiber Communications Conference and Exhibition, OFC 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 8696938. (2019 Optical Fiber Communications Conference and Exhibition, OFC 2019 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Surface emitting lasers
Laser modes
high speed
fibers
Fibers
2014

Quantum-well transistor laser for optical interconnect and photonic integrated circuits

Feng, M., Then, H. W., Tan, F., Wu, M. K., Bambery, R. & Holonyak, N., Dec 9 2014, 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2014. Institute of Electrical and Electronics Engineers Inc., p. 115-122 8 p. 6981297. (Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Optical interconnects
Photonics
Semiconductor quantum wells
Integrated circuits
Transistors
2018

85°C operation of 850 nm VCSELs Deliver a 42 Gb/s error-free data transmission for 100 meter MMF link

Wang, H. L., Qiu, J., Yu, X., Feng, M. & Holonyak, N., Jun 13 2018, 2018 Optical Fiber Communications Conference and Exposition, OFC 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., p. 1-3 3 p.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Forward error correction
Surface emitting lasers
data transmission
Equalizers
Data communication systems
2011

Temperature dependence of a high-performance narrow-stripe (1 μm) single quantum-well transistor laser

Feng, M., Holonyak, N. & James, A., Jan 31 2011, In : Applied Physics Letters. 98, 5, 051107.

Research output: Contribution to journalArticle

transistors
quantum wells
temperature dependence
radiative recombination
confining
2017

Design and fabrication of high-speed PIN photodiodes for 50 Gb/s optical fiber links

Winoto, A., Peng, Y. T. & Feng, M., Jan 1 2017.

Research output: Contribution to conferencePaper

Photodiodes
Optical fibers
Fabrication
Dry etching
Dark currents

Temperature dependent analysis of 50 Gb/s Oxide-Confined VCSELs

Wang, C. Y., Liu, M., Feng, M. & Holonyak, N., May 31 2017, 2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 7937226. (2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Surface emitting lasers
Oxides
high speed
Modulation
bandwidth
2015

Effect of microcavity size to the RIN and 40 Gb/s data transmission performance of high speed VCSELs

Tan, F., Wu, M. K., Wang, C., Liu, M., Feng, M. & Holonyak, N., May 4 2015, CLEO: Science and Innovations, CLEO-SI 2015. Optical Society of America (OSA), 1 p. (CLEO: Science and Innovations, CLEO-SI 2015).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Microcavities
Surface emitting lasers
data transmission
Data communication systems
apertures
2013

Erratum: Hot electron injection effect on the microwave performance of type-I/II AlInP/GaAsSb/InP double-heterojunction bipolar transistors (Applied Physics Letters (2011) 98 (242103))

Donald Cheng, K. Y., Liao, C. C., Xu, H., Norman Cheng, K. Y. & Feng, M., Jul 22 2013, In : Applied Physics Letters. 103, 4, 049903.

Research output: Contribution to journalComment/debate

bipolar transistors
hot electrons
heterojunctions
injection
microwaves
2014

Advanced process and modeling on 600+ GHz emitter ledge type-II GaAsSb/InP DHBT

Xu, H., Wu, B., Winoto, A. & Feng, M., Dec 5 2014, Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC. Institute of Electrical and Electronics Engineers Inc., 6978537. (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

ledges
emitters
Doping (additives)
5,5'-dihydroxy-4,4'-bitryptamine
2019

A NRZ-OOK modulated 850-nm VCSEL with 54 Gb/s error-free data transmission

Huang, T. Y., Qiu, J., Wu, C. H., Cheng, H. T., Feng, M., Kuo, H. C. & Wu, C. H., Jun 2019, 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019. Institute of Electrical and Electronics Engineers Inc., 8871693. (2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

keying
Surface emitting lasers
data transmission
surface emitting lasers
Data communication systems
2010

Sub-100 nm gate III-V MOSFET for digital applications

Cheng, K. Y., Feng, M., Cheng, D. & Liao, C., Dec 1 2010, Fundamentals of III-V Semiconductor MOSFETs. Springer US, p. 285-305 21 p.

Research output: Chapter in Book/Report/Conference proceedingChapter

Hole mobility
Electron transport properties
Electron mobility
Field effect transistors
Thermodynamic stability
2013

The effect of ground and first excited state transitions on transistor laser relative intensity noise

Tan, F., Xu, W., Huang, X., Feng, M. & Holonyak, N., Feb 25 2013, In : Applied Physics Letters. 102, 8, 081103.

Research output: Contribution to journalArticle

noise intensity
transistors
excitation
lasers
noise measurement
2019

Reconfigurable 43 Gb/s optical link test based upon on-wafer probes of GaAs photodetectors and VCSELs up to 85°C

Peng, Y. T., Qiu, J., Wu, D. & Feng, M., Jan 1 2019.

Research output: Contribution to conferencePaper

Optical links
Surface emitting lasers
Photodetectors
Signal to noise ratio
Temperature
2014

Effect of the energy barrier in the base of the transistor laser on the recombination lifetime

Bambery, R., Wang, C., Dallesasse, J. M., Feng, M. & Holonyak, N., Jan 1 2014, In : Applied Physics Letters. 104, 8, 81117.

Research output: Contribution to journalArticle

transistors
life (durability)
frequency response
lasers
minority carriers
2013

Lateral feeding design and selective oxidation process in vertical cavity transistor laser

Liu, M., Wu, M. K., Feng, M. & Holonyak, N., Oct 28 2013, In : Journal of Applied Physics. 114, 16, 163104.

Research output: Contribution to journalArticle

transistors
oxidation
cavities
thresholds
lasers
2011
power efficiency
power amplifiers
Power amplifiers
Inductance
CMOS
2013

Relative intensity noise in high speed microcavity laser

Tan, F., Wu, M. K., Liu, M., Feng, M. & Holonyak, N., Oct 21 2013, In : Applied Physics Letters. 103, 14, 141116.

Research output: Contribution to journalArticle

noise intensity
thermal noise
high speed
surface emitting lasers
cavities
2011

Base charge accumulation and push-out effects on nonlinearity of Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP double heterojunction bipolar transistors

Cheng, K. Y., Xu, H., Stuenkel, M. E., Iverson, E. W., Liao, C. C., Yang, K. W., Feng, M. & Cheng, K. Y., Dec 1 2011, In : Journal of Applied Physics. 110, 11, 113703.

Research output: Contribution to journalArticle

bipolar transistors
accumulators
heterojunctions
nonlinearity
alignment
2012

Voltage modulation of a vertical cavity transistor laser via intra-cavity photon-assisted tunneling

Wu, M. K., Feng, M. & Holonyak, N., Aug 20 2012, In : Applied Physics Letters. 101, 8, 081102.

Research output: Contribution to journalArticle

accumulators
transistors
modulation
cavities
photons
2014

0.5 THz performance of a type-II DHBT with a doping-graded and constant-composition GaAsSb base

Xu, H., Wu, B., Iverson, E. W., Low, T. S. & Feng, M., Jan 1 2014, In : IEEE Electron Device Letters. 35, 1, p. 24-26 3 p., 6678780.

Research output: Contribution to journalArticle

Heterojunction bipolar transistors
Molecular beam epitaxy
Doping (additives)
Chemical analysis
2015

Optical pulse generation in a transistor laser via intra-cavity photon-assisted tunneling and excess base carrier redistribution

Feng, M., Iverson, E. W., Wang, C. Y. & Holonyak, N., Nov 2 2015, In : Applied Physics Letters. 107, 18, 181108.

Research output: Contribution to journalArticle

accumulators
transistors
cavities
photons
pulses
2013

Improvement in enhanced spontaneous emission of resonant cavity light emitting transistors via inductively coupled plasma etching top distributed bragg reflector

Wu, M. K., Liu, M. & Feng, M., Nov 15 2013, 2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013. p. 279-282 4 p. (2013 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2013).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Distributed Bragg reflectors
Cavity resonators
Plasma etching
Spontaneous emission
Inductively coupled plasma
2015

Vertical cavity transistor laser for on-chip OICs

Feng, M., Liu, M., Wang, C. & Holonyak, N., Sep 9 2015, 2015 IEEE Summer Topicals Meeting Series, SUM 2015. Institute of Electrical and Electronics Engineers Inc., p. 146-147 2 p. 7248238. (2015 IEEE Summer Topicals Meeting Series, SUM 2015).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Transistors
Lasers
Surface emitting lasers
Modulation
Bandwidth
2011

The transistor laser

Feng, M. & Holonyak, N., Sep 6 2011, 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011. 5942547. (2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Transistors
Bipolar transistors
Lasers
Semiconductor quantum wells
Semiconductor lasers
2018

Electro-optical bistability in semiconductor laser

Wang, C., Feng, M. & Holonyak, N., Jan 1 2018, CLEO: Science and Innovations, CLEO_SI 2018. OSA - The Optical Society, Vol. Part F94-CLEO_SI 2018.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Optical bistability
Semiconductor lasers
Photons
Semiconductor quantum wells
Transistors
2017

Room temperature operation of electro-optical bistability in the edge-emitting tunneling-collector transistor laser

Feng, M., Holonyak, N. & Wang, C. Y., Sep 14 2017, In : Journal of Applied Physics. 122, 10, 103102.

Research output: Contribution to journalArticle

optical bistability
accumulators
transistors
switches
photons
2013

Composition-graded AlInP/AlGaAsSb/InP type-II DHBTs with f T/fMAX = 450/510GHz

Xu, H., Iverson, E. W., Liao, C. C., Cheng, K. Y. & Feng, M., Jan 1 2013, In : IEEE Electron Device Letters. 34, 1, p. 33-35 3 p., 6361454.

Research output: Contribution to journalArticle

Heterojunction bipolar transistors
Chemical analysis
Molecular beam epitaxy
Electric fields
5,5'-dihydroxy-4,4'-bitryptamine
2019

Direct Tunneling Modulation of Semiconductor Lasers

Qiu, J., Feng, M. & Holonyak, N., May 2019, 2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 8749687. (2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Semiconductor Lasers
Photons
Semiconductor lasers
laser
semiconductor lasers