Abstract
We recently built a 405nm laser based optical interferometry system for 9nm node patterned wafer defect inspection. Defects with volumes smaller than 15nm by 90nm by 35nm have been detected. The success of defect detection relied on accurate mechanical scanning of the wafer and custom engineered image denoising post-processing. To further improve the detection sensitivity, we designed a higher precision XYZ scanning stage and replaced the laser source with an incoherent LED to remove the speckle noise. With these system modifications, we successfully detected both defects and surface contamination particles in bright-field imaging mode. Recently, we have upgraded this system for interferometric defect inspection
| Original language | English (US) |
|---|---|
| Title of host publication | Metrology, Inspection, and Process Control for Microlithography XXIX |
| Editors | Martha I. Sanchez, Jason P. Cain |
| Publisher | SPIE |
| ISBN (Electronic) | 9781628415261 |
| DOIs | |
| State | Published - Jan 1 2015 |
| Event | 29th Conference on Metrology, Inspection, and Process Control for Microlithography - San Jose, United States Duration: Feb 23 2015 → Feb 26 2015 |
Publication series
| Name | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| Volume | 9424 |
| ISSN (Print) | 0277-786X |
| ISSN (Electronic) | 1996-756X |
Other
| Other | 29th Conference on Metrology, Inspection, and Process Control for Microlithography |
|---|---|
| Country | United States |
| City | San Jose |
| Period | 2/23/15 → 2/26/15 |
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Keywords
- 9nm node wafer
- Interferometric microscopy
- Laser defect inspection
- Wafer defect inspection
- White-light defect inspection
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
Cite this
9nm node wafer defect inspection using three-dimensional scanning, a 405nm diode laser, and a broadband source. / Zhou, Renjie; Edwards, Chris; Bryniarski, Casey A.; Popescu, Gabriel; Goddard, Lynford L.
Metrology, Inspection, and Process Control for Microlithography XXIX. ed. / Martha I. Sanchez; Jason P. Cain. SPIE, 2015. 942416 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9424).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - 9nm node wafer defect inspection using three-dimensional scanning, a 405nm diode laser, and a broadband source
AU - Zhou, Renjie
AU - Edwards, Chris
AU - Bryniarski, Casey A.
AU - Popescu, Gabriel
AU - Goddard, Lynford L.
PY - 2015/1/1
Y1 - 2015/1/1
N2 - We recently built a 405nm laser based optical interferometry system for 9nm node patterned wafer defect inspection. Defects with volumes smaller than 15nm by 90nm by 35nm have been detected. The success of defect detection relied on accurate mechanical scanning of the wafer and custom engineered image denoising post-processing. To further improve the detection sensitivity, we designed a higher precision XYZ scanning stage and replaced the laser source with an incoherent LED to remove the speckle noise. With these system modifications, we successfully detected both defects and surface contamination particles in bright-field imaging mode. Recently, we have upgraded this system for interferometric defect inspection
AB - We recently built a 405nm laser based optical interferometry system for 9nm node patterned wafer defect inspection. Defects with volumes smaller than 15nm by 90nm by 35nm have been detected. The success of defect detection relied on accurate mechanical scanning of the wafer and custom engineered image denoising post-processing. To further improve the detection sensitivity, we designed a higher precision XYZ scanning stage and replaced the laser source with an incoherent LED to remove the speckle noise. With these system modifications, we successfully detected both defects and surface contamination particles in bright-field imaging mode. Recently, we have upgraded this system for interferometric defect inspection
KW - 9nm node wafer
KW - Interferometric microscopy
KW - Laser defect inspection
KW - Wafer defect inspection
KW - White-light defect inspection
UR - http://www.scopus.com/inward/record.url?scp=84931032261&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84931032261&partnerID=8YFLogxK
U2 - 10.1117/12.2085683
DO - 10.1117/12.2085683
M3 - Conference contribution
AN - SCOPUS:84931032261
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Metrology, Inspection, and Process Control for Microlithography XXIX
A2 - Sanchez, Martha I.
A2 - Cain, Jason P.
PB - SPIE
ER -