9nm node wafer defect inspection using three-dimensional scanning, a 405nm diode laser, and a broadband source

Renjie Zhou; Chris Edwards; Casey A. Bryniarski; Gabriel Popescu; Lynford L. Goddard

doi:10.1117/12.2085683

9nm node wafer defect inspection using three-dimensional scanning, a 405nm diode laser, and a broadband source

Renjie Zhou, Chris Edwards, Casey A. Bryniarski, Gabriel Popescu, Lynford L. Goddard

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We recently built a 405nm laser based optical interferometry system for 9nm node patterned wafer defect inspection. Defects with volumes smaller than 15nm by 90nm by 35nm have been detected. The success of defect detection relied on accurate mechanical scanning of the wafer and custom engineered image denoising post-processing. To further improve the detection sensitivity, we designed a higher precision XYZ scanning stage and replaced the laser source with an incoherent LED to remove the speckle noise. With these system modifications, we successfully detected both defects and surface contamination particles in bright-field imaging mode. Recently, we have upgraded this system for interferometric defect inspection

Original language	English (US)
Title of host publication	Metrology, Inspection, and Process Control for Microlithography XXIX
Editors	Martha I. Sanchez, Jason P. Cain
Publisher	SPIE
ISBN (Electronic)	9781628415261
DOIs	https://doi.org/10.1117/12.2085683
State	Published - Jan 1 2015
Event	29th Conference on Metrology, Inspection, and Process Control for Microlithography - San Jose, United States Duration: Feb 23 2015 → Feb 26 2015

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9424
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Other

Other	29th Conference on Metrology, Inspection, and Process Control for Microlithography
Country	United States
City	San Jose
Period	2/23/15 → 2/26/15

Keywords

9nm node wafer
Interferometric microscopy
Laser defect inspection
Wafer defect inspection
White-light defect inspection

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.2085683

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Cite this

Zhou, R., Edwards, C., Bryniarski, C. A., Popescu, G., & Goddard, L. L. (2015). 9nm node wafer defect inspection using three-dimensional scanning, a 405nm diode laser, and a broadband source. In M. I. Sanchez, & J. P. Cain (Eds.), Metrology, Inspection, and Process Control for Microlithography XXIX [942416] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9424). SPIE. https://doi.org/10.1117/12.2085683

9nm node wafer defect inspection using three-dimensional scanning, a 405nm diode laser, and a broadband source. / Zhou, Renjie; Edwards, Chris; Bryniarski, Casey A.; Popescu, Gabriel ; Goddard, Lynford L.

Metrology, Inspection, and Process Control for Microlithography XXIX. ed. / Martha I. Sanchez; Jason P. Cain. SPIE, 2015. 942416 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9424).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhou, R, Edwards, C, Bryniarski, CA, Popescu, G & Goddard, LL 2015, 9nm node wafer defect inspection using three-dimensional scanning, a 405nm diode laser, and a broadband source. in MI Sanchez & JP Cain (eds), Metrology, Inspection, and Process Control for Microlithography XXIX., 942416, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9424, SPIE, 29th Conference on Metrology, Inspection, and Process Control for Microlithography, San Jose, United States, 2/23/15. https://doi.org/10.1117/12.2085683

Zhou R, Edwards C, Bryniarski CA, Popescu G , Goddard LL. 9nm node wafer defect inspection using three-dimensional scanning, a 405nm diode laser, and a broadband source. In Sanchez MI, Cain JP, editors, Metrology, Inspection, and Process Control for Microlithography XXIX. SPIE. 2015. 942416. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2085683

Zhou, Renjie ; Edwards, Chris ; Bryniarski, Casey A. ; Popescu, Gabriel ; Goddard, Lynford L. / 9nm node wafer defect inspection using three-dimensional scanning, a 405nm diode laser, and a broadband source. Metrology, Inspection, and Process Control for Microlithography XXIX. editor / Martha I. Sanchez ; Jason P. Cain. SPIE, 2015. (Proceedings of SPIE - The International Society for Optical Engineering).

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