@inproceedings{c8c220498f764170a98fb0032584f368,
title = "9nm node wafer defect inspection using three-dimensional scanning, a 405nm diode laser, and a broadband source",
abstract = "We recently built a 405nm laser based optical interferometry system for 9nm node patterned wafer defect inspection. Defects with volumes smaller than 15nm by 90nm by 35nm have been detected. The success of defect detection relied on accurate mechanical scanning of the wafer and custom engineered image denoising post-processing. To further improve the detection sensitivity, we designed a higher precision XYZ scanning stage and replaced the laser source with an incoherent LED to remove the speckle noise. With these system modifications, we successfully detected both defects and surface contamination particles in bright-field imaging mode. Recently, we have upgraded this system for interferometric defect inspection",
keywords = "9nm node wafer, Interferometric microscopy, Laser defect inspection, Wafer defect inspection, White-light defect inspection",
author = "Renjie Zhou and Chris Edwards and Bryniarski, {Casey A.} and Gabriel Popescu and Goddard, {Lynford L.}",
year = "2015",
month = jan,
day = "1",
doi = "10.1117/12.2085683",
language = "English (US)",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Sanchez, {Martha I.} and Cain, {Jason P.}",
booktitle = "Metrology, Inspection, and Process Control for Microlithography XXIX",
note = "29th Conference on Metrology, Inspection, and Process Control for Microlithography ; Conference date: 23-02-2015 Through 26-02-2015",
}