9nm node wafer defect inspection using three-dimensional scanning, a 405nm diode laser, and a broadband source

Renjie Zhou, Chris Edwards, Casey A. Bryniarski, Gabriel Popescu, Lynford L. Goddard

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We recently built a 405nm laser based optical interferometry system for 9nm node patterned wafer defect inspection. Defects with volumes smaller than 15nm by 90nm by 35nm have been detected. The success of defect detection relied on accurate mechanical scanning of the wafer and custom engineered image denoising post-processing. To further improve the detection sensitivity, we designed a higher precision XYZ scanning stage and replaced the laser source with an incoherent LED to remove the speckle noise. With these system modifications, we successfully detected both defects and surface contamination particles in bright-field imaging mode. Recently, we have upgraded this system for interferometric defect inspection

Original languageEnglish (US)
Title of host publicationMetrology, Inspection, and Process Control for Microlithography XXIX
EditorsMartha I. Sanchez, Jason P. Cain
PublisherSPIE
ISBN (Electronic)9781628415261
DOIs
StatePublished - Jan 1 2015
Event29th Conference on Metrology, Inspection, and Process Control for Microlithography - San Jose, United States
Duration: Feb 23 2015Feb 26 2015

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9424
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

Other29th Conference on Metrology, Inspection, and Process Control for Microlithography
CountryUnited States
CitySan Jose
Period2/23/152/26/15

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Keywords

  • 9nm node wafer
  • Interferometric microscopy
  • Laser defect inspection
  • Wafer defect inspection
  • White-light defect inspection

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Zhou, R., Edwards, C., Bryniarski, C. A., Popescu, G., & Goddard, L. L. (2015). 9nm node wafer defect inspection using three-dimensional scanning, a 405nm diode laser, and a broadband source. In M. I. Sanchez, & J. P. Cain (Eds.), Metrology, Inspection, and Process Control for Microlithography XXIX [942416] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9424). SPIE. https://doi.org/10.1117/12.2085683