850 nm oxide-confined VCSELs with 50 Gb/s error-free transmission operating up to 85 °c

Michael Liu, Cutis Y. Wang, Milton Feng, Nick Holonyak

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Data are presented for the oxide-confined 850 nm VCSEL showing a -3-dB bandwidth of 24.5 GHz at 85 °C and error-free data transmission up to 50 Gb/s at 85 °C.

Original languageEnglish (US)
Title of host publication2016 Conference on Lasers and Electro-Optics, CLEO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781943580118
DOIs
StatePublished - Dec 16 2016
Event2016 Conference on Lasers and Electro-Optics, CLEO 2016 - San Jose, United States
Duration: Jun 5 2016Jun 10 2016

Publication series

Name2016 Conference on Lasers and Electro-Optics, CLEO 2016

Other

Other2016 Conference on Lasers and Electro-Optics, CLEO 2016
CountryUnited States
CitySan Jose
Period6/5/166/10/16

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Liu, M., Wang, C. Y., Feng, M., & Holonyak, N. (2016). 850 nm oxide-confined VCSELs with 50 Gb/s error-free transmission operating up to 85 °c. In 2016 Conference on Lasers and Electro-Optics, CLEO 2016 [7788446] (2016 Conference on Lasers and Electro-Optics, CLEO 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1364/cleo_si.2016.sf1l.6