@inproceedings{f90ffd653e3f4e21b01b44bd73b62806,
title = "850 nm GaAs P-i-N photodiodes for 50 Gb/s optical links with dark current below 1 pA",
abstract = "Fabrication techniques and experimental data are presented for 850 nm GaAs P-i-N photodiodes designed for 50 Gb/s optical links. Optimizations in the device structure and the selective dry etching process reduce dark current below 1pA. Responsivity is shown to be comparable to commercial devices with similar dimensions. And microwave measurement shows a highest bandwidth of above 30 GHz, indicating potential for 60 Gb/s operation. Data rate testing is performed with a VCSEL up to 50 Gb/s, showing clear eye diagrams.",
keywords = "Bandwidth, Optical Fiber Links, P-i-N Photodiode",
author = "Dufei Wu and Peng, {Yu Ting} and Milton Feng",
note = "Funding Information: We sincerely acknowledge the generous sponsorship of this research project by Foxconn Interconnect Technology. The authors like to thank the support from Dr. Dennis Deppe, CEO sdPhotonics (Texas) and Dr. William Harrod, IARPA Super Cable Program under ARO W911NF-18-S-0009. Publisher Copyright: {\textcopyright} CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers.; 2020 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2020 ; Conference date: 11-05-2020 Through 14-05-2020",
year = "2020",
language = "English (US)",
series = "CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers",
publisher = "CS Mantech",
pages = "279--282",
booktitle = "CS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers",
}