850 nm GaAs P-i-N photodiodes for 50 Gb/s optical links with dark current below 1 pA

Dufei Wu, Yu Ting Peng, Milton Feng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Fabrication techniques and experimental data are presented for 850 nm GaAs P-i-N photodiodes designed for 50 Gb/s optical links. Optimizations in the device structure and the selective dry etching process reduce dark current below 1pA. Responsivity is shown to be comparable to commercial devices with similar dimensions. And microwave measurement shows a highest bandwidth of above 30 GHz, indicating potential for 60 Gb/s operation. Data rate testing is performed with a VCSEL up to 50 Gb/s, showing clear eye diagrams.

Original languageEnglish (US)
Title of host publicationCS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers
PublisherCS Mantech
Pages279-282
Number of pages4
ISBN (Electronic)9781893580305
StatePublished - 2020
Event2020 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2020 - Tuczon, United States
Duration: May 11 2020May 14 2020

Publication series

NameCS MANTECH 2020 - 2020 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

Conference

Conference2020 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2020
CountryUnited States
CityTuczon
Period5/11/205/14/20

Keywords

  • Bandwidth
  • Optical Fiber Links
  • P-i-N Photodiode

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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