760 nm Vertical cavity surface emitting lasers for gas sensing

E. W. Young, Y. K. Kim, K. D. Choquette, P. Leinenen, T. Leinonen, J. Viheriälä, M. Pessa

Research output: Contribution to journalConference article

Abstract

Lasing was observed for the first time for 766 nm vertical cavity surface emitting lasers with strained AlGaInAs/AlGaAs quantum wells. The selectively oxidized structure was grown by solid source molecular beam epitaxy and the lasers operated under pulsed excitation.

Original languageEnglish (US)
Pages (from-to)670-672
Number of pages3
JournalOSA Trends in Optics and Photonics Series
Volume88
StatePublished - Jan 1 2003
EventConference on Lasers and Electro-Optics (CLEO); Postconference Digest - Baltimore, MD, United States
Duration: Jun 1 2003Jun 6 2003

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Young, E. W., Kim, Y. K., Choquette, K. D., Leinenen, P., Leinonen, T., Viheriälä, J., & Pessa, M. (2003). 760 nm Vertical cavity surface emitting lasers for gas sensing. OSA Trends in Optics and Photonics Series, 88, 670-672.