64-Gbit/s GaAs integrated DANE receiver/laser driver

Wei Heng Chang, Jinghui H. Mu, M. Heins, Milton Feng, J. Kim, David S. McCallum, Richard V. Stone, Peter S. Guilfoyle

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Optical interconnects provide wide bandwidth, lowloss, and high fanout as compared to those for traditional electrical interconnects. In the past years many high performance optoelectronic circuits have been demonstrated. However, most of them require complicated process and exotic devices. To make optical interconnects in real system and commercial use, circuits utilizing manufacturable, robust, and low-cost technology have to be realized. Ion implanted GaAs MESFETs provide great promise due to their simplicity in manufacturing and their high speed performance. The optical characteristics of GaAs materials also make this technology favorable in realizing low-cost, high-performance OEICs.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsRay T. Chen, Peter S. Guilfoyle
PublisherSociety of Photo-Optical Instrumentation Engineers
Number of pages20
ISBN (Print)0819424161
StatePublished - Dec 1 1997
EventOptoelectronic Interconnects and Packaging IV - San Jose, CA, USA
Duration: Feb 12 1997Feb 14 1997

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherOptoelectronic Interconnects and Packaging IV
CitySan Jose, CA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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