60-GHz Power Performance of Ion-Implanted InxGa(1-x)As/GaAs MESFET’s

Milton Feng; C. L. Lau; Thomas R. Lepkowski; Paul Brusenback; James M. Schellenberg

doi:10.1109/55.63031

60-GHz Power Performance of Ion-Implanted InxGa(1-x)As/GaAs MESFET’s

Milton Feng, C. L. Lau, Thomas R. Lepkowski, Paul Brusenback, James M. Schellenberg

Research output: Contribution to journal › Article › peer-review

Abstract

This paper presents state-of-the-art 60-GHz power performance achieved by ion-implanted InGaAs/GaAs MESFET’s for a 0.25 X 200-µm gate length device. At output power of 100 mW, a power-added efficiency of 15% and associated gain of 4.2 dB were obtained and a saturated output power of 121 mW was achieved for the same device. These results are comparable to the best reported millimeter-wave power performance of InGaAs/GaAs pseudomorphic HEMT’s.

Original language	English (US)
Pages (from-to)	496-498
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	11
Issue number	11
DOIs	https://doi.org/10.1109/55.63031
State	Published - Nov 1990
Externally published	Yes

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Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "60-GHz Power Performance of Ion-Implanted InxGa(1-x)As/GaAs MESFET{\textquoteright}s",

abstract = "This paper presents state-of-the-art 60-GHz power performance achieved by ion-implanted InGaAs/GaAs MESFET{\textquoteright}s for a 0.25 X 200-µm gate length device. At output power of 100 mW, a power-added efficiency of 15% and associated gain of 4.2 dB were obtained and a saturated output power of 121 mW was achieved for the same device. These results are comparable to the best reported millimeter-wave power performance of InGaAs/GaAs pseudomorphic HEMT{\textquoteright}s.",

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year = "1990",

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T1 - 60-GHz Power Performance of Ion-Implanted InxGa(1-x)As/GaAs MESFET’s

AU - Feng, Milton

AU - Lau, C. L.

AU - Lepkowski, Thomas R.

AU - Brusenback, Paul

AU - Schellenberg, James M.

PY - 1990/11

Y1 - 1990/11

N2 - This paper presents state-of-the-art 60-GHz power performance achieved by ion-implanted InGaAs/GaAs MESFET’s for a 0.25 X 200-µm gate length device. At output power of 100 mW, a power-added efficiency of 15% and associated gain of 4.2 dB were obtained and a saturated output power of 121 mW was achieved for the same device. These results are comparable to the best reported millimeter-wave power performance of InGaAs/GaAs pseudomorphic HEMT’s.

AB - This paper presents state-of-the-art 60-GHz power performance achieved by ion-implanted InGaAs/GaAs MESFET’s for a 0.25 X 200-µm gate length device. At output power of 100 mW, a power-added efficiency of 15% and associated gain of 4.2 dB were obtained and a saturated output power of 121 mW was achieved for the same device. These results are comparable to the best reported millimeter-wave power performance of InGaAs/GaAs pseudomorphic HEMT’s.

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ER -

60-GHz Power Performance of Ion-Implanted InxGa(1-x)As/GaAs MESFET’s

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