60-GHz Power Performance of Ion-Implanted InxGa(1-x)As/GaAs MESFET’s

Milton Feng, C. L. Lau, Thomas R. Lepkowski, Paul Brusenback, James M. Schellenberg

Research output: Contribution to journalArticle

Abstract

This paper presents state-of-the-art 60-GHz power performance achieved by ion-implanted InGaAs/GaAs MESFET’s for a 0.25 X 200-µm gate length device. At output power of 100 mW, a power-added efficiency of 15% and associated gain of 4.2 dB were obtained and a saturated output power of 121 mW was achieved for the same device. These results are comparable to the best reported millimeter-wave power performance of InGaAs/GaAs pseudomorphic HEMT’s.

Original languageEnglish (US)
Pages (from-to)496-498
Number of pages3
JournalIEEE Electron Device Letters
Volume11
Issue number11
DOIs
StatePublished - Nov 1990
Externally publishedYes

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Feng, M., Lau, C. L., Lepkowski, T. R., Brusenback, P., & Schellenberg, J. M. (1990). 60-GHz Power Performance of Ion-Implanted InxGa(1-x)As/GaAs MESFET’s. IEEE Electron Device Letters, 11(11), 496-498. https://doi.org/10.1109/55.63031