This paper presents state-of-the-art 60-GHz power performance achieved by ion-implanted InGaAs/GaAs MESFET’s for a 0.25 X 200-µm gate length device. At output power of 100 mW, a power-added efficiency of 15% and associated gain of 4.2 dB were obtained and a saturated output power of 121 mW was achieved for the same device. These results are comparable to the best reported millimeter-wave power performance of InGaAs/GaAs pseudomorphic HEMT’s.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering