Low-noise ion-implanted InxGa1-xAs MESFET's with 0.25-μm T-gates have been developed at 60 GHz. The device noise figure was 2.8 dB with an associated gain of 5.6 dB at 60 GHz. A hybrid two-stage amplifier using these ion-implanted InxGa1-xAs MESFET's achieved a noise figure of 4.6 dB with an associated gain of 10.1 dB at 60 GHz. When this amplifier was biased at 100% Idss, it achieved 11.5-dB gain at 60 GHz. These results, achieved using low-cost ion-implantation techniques, are the best reported noise figures for ion-implanted MESFET's. C. L. Lau, P. Brusenback, T. Lepkowski, T. Hwang, and C. Ito are with Ford Microelectronics, Inc., Colorado Spring, CO 80921.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering