Abstract
Low-noise ion-implanted InxGa1-xAs MESFET's with 0.25-μm T-gates have been developed at 60 GHz. The device noise figure was 2.8 dB with an associated gain of 5.6 dB at 60 GHz. A hybrid two-stage amplifier using these ion-implanted InxGa1-xAs MESFET's achieved a noise figure of 4.6 dB with an associated gain of 10.1 dB at 60 GHz. When this amplifier was biased at 100% Idss, it achieved 11.5-dB gain at 60 GHz. These results, achieved using low-cost ion-implantation techniques, are the best reported noise figures for ion-implanted MESFET's. C. L. Lau, P. Brusenback, T. Lepkowski, T. Hwang, and C. Ito are with Ford Microelectronics, Inc., Colorado Spring, CO 80921.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 244-245 |
| Number of pages | 2 |
| Journal | IEEE Electron Device Letters |
| Volume | 12 |
| Issue number | 5 |
| DOIs | |
| State | Published - May 1991 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Lau, C. L., & Feng, M. (1991). 60-Ghz Noise Performance of Ion-Implanted Inxga1-Xas Mesfet'S. IEEE Electron Device Letters, 12(5), 244-245. https://doi.org/10.1109/55.79561