60-Ghz Noise Performance of Ion-Implanted Inxga1-Xas Mesfet'S

C. L. Lau; Milton Feng

doi:10.1109/55.79561

60-Ghz Noise Performance of Ion-Implanted Inxga1-Xas Mesfet'S

Research output: Contribution to journal › Article › peer-review

Abstract

Low-noise ion-implanted InxGa1-xAs MESFET's with 0.25-μm T-gates have been developed at 60 GHz. The device noise figure was 2.8 dB with an associated gain of 5.6 dB at 60 GHz. A hybrid two-stage amplifier using these ion-implanted InxGa1-xAs MESFET's achieved a noise figure of 4.6 dB with an associated gain of 10.1 dB at 60 GHz. When this amplifier was biased at 100% Idss, it achieved 11.5-dB gain at 60 GHz. These results, achieved using low-cost ion-implantation techniques, are the best reported noise figures for ion-implanted MESFET's. C. L. Lau, P. Brusenback, T. Lepkowski, T. Hwang, and C. Ito are with Ford Microelectronics, Inc., Colorado Spring, CO 80921.

Original language	English (US)
Pages (from-to)	244-245
Number of pages	2
Journal	IEEE Electron Device Letters
Volume	12
Issue number	5
DOIs	https://doi.org/10.1109/55.79561
State	Published - May 1991
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "60-Ghz Noise Performance of Ion-Implanted Inxga1-Xas Mesfet'S",

abstract = "Low-noise ion-implanted InxGa1-xAs MESFET's with 0.25-μm T-gates have been developed at 60 GHz. The device noise figure was 2.8 dB with an associated gain of 5.6 dB at 60 GHz. A hybrid two-stage amplifier using these ion-implanted InxGa1-xAs MESFET's achieved a noise figure of 4.6 dB with an associated gain of 10.1 dB at 60 GHz. When this amplifier was biased at 100% Idss, it achieved 11.5-dB gain at 60 GHz. These results, achieved using low-cost ion-implantation techniques, are the best reported noise figures for ion-implanted MESFET's. C. L. Lau, P. Brusenback, T. Lepkowski, T. Hwang, and C. Ito are with Ford Microelectronics, Inc., Colorado Spring, CO 80921.",

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N2 - Low-noise ion-implanted InxGa1-xAs MESFET's with 0.25-μm T-gates have been developed at 60 GHz. The device noise figure was 2.8 dB with an associated gain of 5.6 dB at 60 GHz. A hybrid two-stage amplifier using these ion-implanted InxGa1-xAs MESFET's achieved a noise figure of 4.6 dB with an associated gain of 10.1 dB at 60 GHz. When this amplifier was biased at 100% Idss, it achieved 11.5-dB gain at 60 GHz. These results, achieved using low-cost ion-implantation techniques, are the best reported noise figures for ion-implanted MESFET's. C. L. Lau, P. Brusenback, T. Lepkowski, T. Hwang, and C. Ito are with Ford Microelectronics, Inc., Colorado Spring, CO 80921.

AB - Low-noise ion-implanted InxGa1-xAs MESFET's with 0.25-μm T-gates have been developed at 60 GHz. The device noise figure was 2.8 dB with an associated gain of 5.6 dB at 60 GHz. A hybrid two-stage amplifier using these ion-implanted InxGa1-xAs MESFET's achieved a noise figure of 4.6 dB with an associated gain of 10.1 dB at 60 GHz. When this amplifier was biased at 100% Idss, it achieved 11.5-dB gain at 60 GHz. These results, achieved using low-cost ion-implantation techniques, are the best reported noise figures for ion-implanted MESFET's. C. L. Lau, P. Brusenback, T. Lepkowski, T. Hwang, and C. Ito are with Ford Microelectronics, Inc., Colorado Spring, CO 80921.

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