6 nm half-pitch lines and 0.04 νm 2 static random access memory patterns by nanoimprint lithography

Michael D. Austin, Wei Zhang, Haixiong Ge, D. Wasserman, S. A. Lyon, Stephen Y. Chou

Research output: Contribution to journalArticle

Abstract

A key issue in nanoimprint lithography (NIL) is determining the ultimate pitch resolution achievable for various pattern shapes and their critical dimensional control. To this end, we demonstrated the fabrication of 6 nm half-pitch gratings and 0.04 νm 2 cell area SRAM metal interconnects with 20 nm line half-pitch in resist by NIL. The mould for the 6 nm half-pitch grating was fabricated by cleaving a GaAs /Al 0.7Ga 0.3As superlattice grown on GaAs with molecular beam epitaxy, and selectively etching away the Al 0.7Ga 0.3As layers in dilute hydrofluoric acid. The mould for the 0.04 νm 2 SRAM metal interconnects was fabricated in silicon dioxide using 35 kV electron beam lithography with polystyrene as a negative resist and a reactive ion etch with the resist as mask. Imprints from both moulds showed excellent fidelity and critical dimension control.

Original languageEnglish (US)
Pages (from-to)1058-1061
Number of pages4
JournalNanotechnology
Volume16
Issue number8
DOIs
StatePublished - Aug 1 2005

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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    Austin, M. D., Zhang, W., Ge, H., Wasserman, D., Lyon, S. A., & Chou, S. Y. (2005). 6 nm half-pitch lines and 0.04 νm 2 static random access memory patterns by nanoimprint lithography. Nanotechnology, 16(8), 1058-1061. https://doi.org/10.1088/0957-4484/16/8/010