5.4 GHz acoustic delay lines in lithium niobate thin film with 3 dB insertion loss

Ruochen Lu, Yansong Yang, Steffen Link, Songbin Gong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, we present the low-loss acoustic delay lines (ADLs) at 5.4 GHz, using the first-order antisymmetric (A1) mode in lithium niobate thin films. The ADLs use a single-phase unidirectional transducer (SPUDT) design with a feature size of the quarter acoustic wavelength. The fabricated miniature A1 ADLs with a feature size of 0.45 μm show a center frequency of 5.4 GHz, a minimum insertion loss (IL) of 3.0 dB, and a fractional bandwidth (FBW) of 1.6% while occupying a footprint of 0.0074 mm2. The simultaneously low IL and high operating frequency significantly surpass the state-of-the-art performance of ADLs. The propagation characteristics of A1 acoustic waves have also been extracted. The demonstrated performance can potentially enable low-loss, high-frequency transversal filter applications for future 5G applications in the sub-6 GHz spectrum bands.

Original languageEnglish (US)
Title of host publicationIMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages245-248
Number of pages4
ISBN (Electronic)9781728168159
DOIs
StatePublished - Aug 2020
Event2020 IEEE/MTT-S International Microwave Symposium, IMS 2020 - Virtual, Los Angeles, United States
Duration: Aug 4 2020Aug 6 2020

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
Volume2020-August
ISSN (Print)0149-645X

Conference

Conference2020 IEEE/MTT-S International Microwave Symposium, IMS 2020
CountryUnited States
CityVirtual, Los Angeles
Period8/4/208/6/20

Keywords

  • 5G mobile communication
  • Acoustic devices
  • Delay lines
  • Microelectromechanical systems
  • Piezoelectric devices
  • Thin-film devices
  • Transversal filters

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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