500 °c operation of β -Ga2O3field-effect transistors

Ahmad E. Islam, Nicholas P. Sepelak, Kyle J. Liddy, Rachel Kahler, Daniel M. Dryden, Jeremiah Williams, Hanwool Lee, Katie Gann, Andreas Popp, Kevin D. Leedy, Nolan S. Hendricks, Jeff L. Brown, Eric R. Heller, Weisong Wang, Wenjuan Zhu, Michael O. Thompson, Kelson D. Chabak, Andrew J. Green

Research output: Contribution to journalArticlepeer-review


We demonstrated 500 °C operation of field-effect transistors made using ultra-wide bandgap semiconductor β-Ga2O3. Metal-semiconductor field-effect transistors were fabricated using epitaxial conductive films grown on an insulating β-Ga2O3 substrate, TiW refractory metal gates, and Si-implanted source/drain contacts. Devices were characterized in DC mode at different temperatures up to 500 °C in vacuum. These variable-temperature measurements showed a reduction in gate modulation of the drain current due to an increase in gate leakage across the gate/semiconductor Schottky barrier. Devices exhibited a reduction in transconductance with increasing temperature; despite this, drain current increased with temperature due to a reduction in threshold voltage caused by the de-trapping of electrons from deep-level traps. Devices also showed negligible change in semiconductor epitaxy and source/drain contacts, hence demonstrated recovery to their room-temperature electrical properties after the devices were tested intermittently at different high temperatures in vacuum. The mechanism of gate leakage was also explored, which implicated the presence of different conduction mechanisms at different temperatures and gate electric fields.

Original languageEnglish (US)
Article number243501
JournalApplied Physics Letters
Issue number24
StatePublished - Dec 12 2022

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of '500 °c operation of β -Ga2O3field-effect transistors'. Together they form a unique fingerprint.

Cite this