44 GHz hybrid low noise amplifiers using ion-implanted InxGa1-xAs MESFETs

C. L. Lau, M. Feng, G. W. Wang, T. Lepkowski, Y. Chang, C. Ito, V. Dunn, N. Hodges, J. Schellenberg

Research output: Contribution to journalConference articlepeer-review

Abstract

Hybrid low-noise amplifiers using ion-implanted InxGa1-xAs MESFETs with 0.25-μm T-gates have been developed at 44 GHz. The hybrid two-stage amplifier using these ion-implanted InxGa1-xAs MESFETs achieved a noise figure of 3.6 dB with an associated gain of 14.4 dB at 44 GHz. When two of these amplifiers were cascaded, the four-stage amplifier demonstrated a gain of 30.5 dB at 44 GHz and 37 dB at 40 GHz. These results, achieved using low cost ion-implantation techniques, rival the best high-electron-mobility transistor (HEMT) results.

Original languageEnglish (US)
Pages (from-to)431-433
Number of pages3
JournalIEEE MTT-S International Microwave Symposium Digest
Volume1
StatePublished - Jan 1 1990
Externally publishedYes
Event1990 IEEE MTT-S International Microwave Symposium Digest Part 1 (of 3) - Dallas, TX, USA
Duration: May 8 1990May 10 1990

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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