Abstract
Hybrid low-noise amplifiers using ion-implanted InxGa1-xAs MESFETs with 0.25-μm T-gates have been developed at 44 GHz. The hybrid two-stage amplifier using these ion-implanted InxGa1-xAs MESFETs achieved a noise figure of 3.6 dB with an associated gain of 14.4 dB at 44 GHz. When two of these amplifiers were cascaded, the four-stage amplifier demonstrated a gain of 30.5 dB at 44 GHz and 37 dB at 40 GHz. These results, achieved using low cost ion-implantation techniques, rival the best high-electron-mobility transistor (HEMT) results.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 431-433 |
| Number of pages | 3 |
| Journal | IEEE MTT-S International Microwave Symposium Digest |
| Volume | 1 |
| State | Published - 1990 |
| Externally published | Yes |
| Event | 1990 IEEE MTT-S International Microwave Symposium Digest Part 1 (of 3) - Dallas, TX, USA Duration: May 8 1990 → May 10 1990 |
ASJC Scopus subject areas
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering