4.3 GHz optical bandwidth light emitting transistor

G. Walter; C. H. Wu; H. W. Then; M. Feng; N. Holonyak

doi:10.1063/1.3153146

4.3 GHz optical bandwidth light emitting transistor

G. Walter, C. H. Wu, H. W. Then, M. Feng, N. Holonyak

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrate a quantum-well base heterojunction bipolar light emitting transistor (HBLET) operating in the common collector configuration with a 3 dB optical response bandwidth f3 dB of 4.3 GHz. The HBLET has a current gain, Β (= Δ IC /Δ IB ) as high as 30, and can be operated as a three-port device to provide simultaneously an optical and electrical output with gain. The f3 dB of 4.3 GHz corresponds to an effective carrier recombination lifetime of 37 ps, and shows that "fast" spontaneous recombination can be harnessed for high-speed modulation.

Original language	English (US)
Article number	241101
Journal	Applied Physics Letters
Volume	94
Issue number	24
DOIs	https://doi.org/10.1063/1.3153146
State	Published - 2009

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3153146

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abstract = "We demonstrate a quantum-well base heterojunction bipolar light emitting transistor (HBLET) operating in the common collector configuration with a 3 dB optical response bandwidth f3 dB of 4.3 GHz. The HBLET has a current gain, Β (= Δ IC /Δ IB ) as high as 30, and can be operated as a three-port device to provide simultaneously an optical and electrical output with gain. The f3 dB of 4.3 GHz corresponds to an effective carrier recombination lifetime of 37 ps, and shows that {"}fast{"} spontaneous recombination can be harnessed for high-speed modulation.",

author = "G. Walter and Wu, {C. H.} and Then, {H. W.} and M. Feng and N. Holonyak",

note = "Funding Information: N. Holonyak, Jr. is grateful for the support of the John Bardeen, Chair (Sony) of Electrical and Computer Engineering and Physics, and M. Feng for the support of the Nick Holonyak, Jr., Chair of Electrical and Computer Engineering. G. Walter is grateful for the support of the Brain Gain Malaysia Diaspora (MOSTI) Program. The authors would like to thank Dr. Michael Gerhold (Army Research Office) and acknowledge the support by Army Research Office, Grant No. W911NF-08-1-0469.",

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AU - Walter, G.

AU - Wu, C. H.

AU - Then, H. W.

AU - Feng, M.

AU - Holonyak, N.

N1 - Funding Information: N. Holonyak, Jr. is grateful for the support of the John Bardeen, Chair (Sony) of Electrical and Computer Engineering and Physics, and M. Feng for the support of the Nick Holonyak, Jr., Chair of Electrical and Computer Engineering. G. Walter is grateful for the support of the Brain Gain Malaysia Diaspora (MOSTI) Program. The authors would like to thank Dr. Michael Gerhold (Army Research Office) and acknowledge the support by Army Research Office, Grant No. W911NF-08-1-0469.

PY - 2009

Y1 - 2009

N2 - We demonstrate a quantum-well base heterojunction bipolar light emitting transistor (HBLET) operating in the common collector configuration with a 3 dB optical response bandwidth f3 dB of 4.3 GHz. The HBLET has a current gain, Β (= Δ IC /Δ IB ) as high as 30, and can be operated as a three-port device to provide simultaneously an optical and electrical output with gain. The f3 dB of 4.3 GHz corresponds to an effective carrier recombination lifetime of 37 ps, and shows that "fast" spontaneous recombination can be harnessed for high-speed modulation.

AB - We demonstrate a quantum-well base heterojunction bipolar light emitting transistor (HBLET) operating in the common collector configuration with a 3 dB optical response bandwidth f3 dB of 4.3 GHz. The HBLET has a current gain, Β (= Δ IC /Δ IB ) as high as 30, and can be operated as a three-port device to provide simultaneously an optical and electrical output with gain. The f3 dB of 4.3 GHz corresponds to an effective carrier recombination lifetime of 37 ps, and shows that "fast" spontaneous recombination can be harnessed for high-speed modulation.

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ER -

4.3 GHz optical bandwidth light emitting transistor

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