4.3 GHz optical bandwidth light emitting transistor

G. Walter, C. H. Wu, H. W. Then, M. Feng, N. Holonyak

Research output: Contribution to journalArticle

Abstract

We demonstrate a quantum-well base heterojunction bipolar light emitting transistor (HBLET) operating in the common collector configuration with a 3 dB optical response bandwidth f3 dB of 4.3 GHz. The HBLET has a current gain, Β (= Δ IC /Δ IB ) as high as 30, and can be operated as a three-port device to provide simultaneously an optical and electrical output with gain. The f3 dB of 4.3 GHz corresponds to an effective carrier recombination lifetime of 37 ps, and shows that "fast" spontaneous recombination can be harnessed for high-speed modulation.

Original languageEnglish (US)
Article number241101
JournalApplied Physics Letters
Volume94
Issue number24
DOIs
StatePublished - Jun 29 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Walter, G., Wu, C. H., Then, H. W., Feng, M., & Holonyak, N. (2009). 4.3 GHz optical bandwidth light emitting transistor. Applied Physics Letters, 94(24), [241101]. https://doi.org/10.1063/1.3153146