40 volt silicon complementary bipolar technology for high-precision and high-frequency analog circuits

Rashid Bashir, J. De Santis, D. Chen, F. Hebert, A. Ramde, P. Maghsoudnia, H. You, P. Meng, F. Moraveji, R. Razouk

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A high performance and low cost complementary bipolar technology has been developed for the realization of high-precision and high-frequency analog circuits. The technology, referred to as VIP-3 (Vertically Integrated PNP-3), offers transistors with typical BVceo of NPN and PNP transistors at 45 and 60 volts, respectively. In addition, the technology offers BVceoxft/hfexVa figures of merit in excess of 135 GHz · V/20,000 V for NPN and 130 GHz·V/6,500 V for PNP.

Original languageEnglish (US)
Title of host publicationIEEE Bipolar/BiCMOS Circuits and Technology Meeting
EditorsC.R. Selvakumar
Pages225-228
Number of pages4
StatePublished - 1994
Externally publishedYes
EventProceedings of the 1994 Bipolar/BiCMOS Circuits and Technology Meeting - Minneapolis, MN, USA
Duration: Oct 10 1994Oct 11 1994

Other

OtherProceedings of the 1994 Bipolar/BiCMOS Circuits and Technology Meeting
CityMinneapolis, MN, USA
Period10/10/9410/11/94

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Bashir, R., De Santis, J., Chen, D., Hebert, F., Ramde, A., Maghsoudnia, P., You, H., Meng, P., Moraveji, F., & Razouk, R. (1994). 40 volt silicon complementary bipolar technology for high-precision and high-frequency analog circuits. In C. R. Selvakumar (Ed.), IEEE Bipolar/BiCMOS Circuits and Technology Meeting (pp. 225-228)