Abstract
A high performance and low cost complementary bipolar technology has been developed for the realization of high-precision and high-frequency analog circuits. The technology, referred to as VIP-3 (Vertically Integrated PNP-3), offers transistors with typical BVceo of NPN and PNP transistors at 45 and 60 volts, respectively. In addition, the technology offers BVceoxft/hfexVa figures of merit in excess of 135 GHz · V/20,000 V for NPN and 130 GHz·V/6,500 V for PNP.
Original language | English (US) |
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Title of host publication | IEEE Bipolar/BiCMOS Circuits and Technology Meeting |
Editors | C.R. Selvakumar |
Pages | 225-228 |
Number of pages | 4 |
State | Published - 1994 |
Externally published | Yes |
Event | Proceedings of the 1994 Bipolar/BiCMOS Circuits and Technology Meeting - Minneapolis, MN, USA Duration: Oct 10 1994 → Oct 11 1994 |
Other
Other | Proceedings of the 1994 Bipolar/BiCMOS Circuits and Technology Meeting |
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City | Minneapolis, MN, USA |
Period | 10/10/94 → 10/11/94 |
ASJC Scopus subject areas
- General Engineering