Abstract
This paper reviews the on-wafer testing and subsequent data analysis procedures of 40 Gb/s oxide-confined VCSELs. Several key performance metrics are carefully defined and their measurement procedure explained. After data collection, a wafer-scale heat map is constructed to help to visualize device performance uniformity in terms of output power, threshold, and optical aperture diameter. Further data analysis reveals that the large variation of output power in this sample can be attributed to the VCSEL window quality, which is confirmed by reexamining the sample. Thus we have used VCSEL testing data analysis techniques to identify device processing issues, fully utilizing device testing as important quality assurance and information feedback step.
Original language | English (US) |
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State | Published - 2017 |
Event | 2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017 - Indian Wells, United States Duration: May 22 2017 → May 25 2017 |
Other
Other | 2017 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2017 |
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Country/Territory | United States |
City | Indian Wells |
Period | 5/22/17 → 5/25/17 |
Keywords
- Data analysis
- Testing
- VCSEL
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering