40 000 pixel arrays of ac-excited silicon microcavity plasma devices

S. J. Park, K. F. Chen, N. P. Ostrom, J. G. Eden

Research output: Contribution to journalArticle

Abstract

Arrays of (50 μm) 2 Si microcavity plasma devices, as large as 40 000 pixels (200 × 200) with a packing density of 10 4 pixels cm -2, have been operated continuously in 500-900 Torr of Ne with ac excitation (5-20 kHz). More than two orders of magnitude larger than previously reported microplasma device arrays, 200 × 200 pixel structures produce uniform glow discharges in each pixel, have a power consumption of ∼0.85 W cm -2 for p Ne=700 Torr and an excitation frequency of 5 kHz, and exhibit maximum radiative efficiency for a Ne pressure of p Ne= 700 Torr and an excitation frequency of 10-15 kHz. All arrays examined (10×10→200×200) are characterized by pixel-to-pixel emission intensities constant over the entire array to within ±10%, and no barriers to the successful operation of much larger arrays are apparent.

Original languageEnglish (US)
Article number111501
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number11
DOIs
StatePublished - Mar 14 2005

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pixels
silicon
excitation
microplasmas
packing density
glow discharges

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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40 000 pixel arrays of ac-excited silicon microcavity plasma devices. / Park, S. J.; Chen, K. F.; Ostrom, N. P.; Eden, J. G.

In: Applied Physics Letters, Vol. 86, No. 11, 111501, 14.03.2005, p. 1-3.

Research output: Contribution to journalArticle

Park, S. J. ; Chen, K. F. ; Ostrom, N. P. ; Eden, J. G. / 40 000 pixel arrays of ac-excited silicon microcavity plasma devices. In: Applied Physics Letters. 2005 ; Vol. 86, No. 11. pp. 1-3.
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