3D Nanoscale pattern formation in porous silicon

Ik Su Chun, Edmond K. Chow, Xiuling Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A simple and effective processing technique for 3D nanoscale pattern formation in light emitting porous silicon is reported. The technique is based on metal assisted chemical etching and defined by the 2D nanoscale metal pattern.

Original languageEnglish (US)
Title of host publication2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS
DOIs
StatePublished - Sep 15 2008
EventConference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008 - San Jose, CA, United States
Duration: May 4 2008May 9 2008

Publication series

Name2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS

Other

OtherConference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS 2008
CountryUnited States
CitySan Jose, CA
Period5/4/085/9/08

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Chun, I. S., Chow, E. K., & Li, X. (2008). 3D Nanoscale pattern formation in porous silicon. In 2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS [4551902] (2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS). https://doi.org/10.1109/CLEO.2008.4551902