3D Monte Carlo simulation of transport in electro-statically confined silicon nanochannels

Keyphrases

• 3D Monte Carlo Simulation 100%
• Conduction Channel 50%
• Conventional MOSFET 50%
• Current Drive 100%
• Design Considerations 50%
• Design Recommendations 50%
• Drain Voltage 50%
• Fabrication Methods 50%
• Gate Structure 100%
• Monte Carlo Method 50%
• Multi-channel 50%
• Nanowires 50%
• Oxide Trench 50%
• Silicon Nanochannel 100%
• Silicon Nanowires (SiNWs) 50%
• T Gate 100%

Engineering

• Current Drive 100%
• Design Consideration 50%
• Drain Voltage 50%
• Electrostatics 50%
• Fabrication Technique 50%
• Metal-Oxide-Semiconductor Field-Effect Transistor 50%
• Monte Carlo Approach 50%
• Nanowires 100%

Material Science

• Metal-Oxide-Semiconductor Field-Effect Transistor 50%
• Nanowire 100%
• Oxide Compound 50%
• Silicon 100%