3D Monte Carlo simulation of transport in electro-statically confined silicon nanochannels

Mohamed Mohamed, Pierre Martin, Umberto Ravaioli

Research output: Contribution to journalConference article

Abstract

This study investigates transport and electrostatic behavior of quasi ID nanowires adopting a relatively simple planar fabrication technique. The confined conduction channel is created by etching an oxide trench, realizing a T-gate structure. Since multiple channels are normally needed to realize sufficient current drive in practical applications, the behavior of single and coupled adjacent silicon nanowires is characterized using a 3D quantum corrected Monte Carlo approach. Results indicate that a single T-gate structure provides over 27% increase in current drive compared to conventional MOSFET at a drain voltage of IV. In addition, design consideration and recommendation is presented.

Original languageEnglish (US)
Pages (from-to)39-42
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number1
DOIs
StatePublished - Jun 30 2008
Event15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, HCIS15 - Tokyo, Japan
Duration: Jul 23 2007Jul 27 2007

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nanowires
silicon
recommendations
field effect transistors
simulation
etching
electrostatics
conduction
fabrication
oxides
electric potential

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

3D Monte Carlo simulation of transport in electro-statically confined silicon nanochannels. / Mohamed, Mohamed; Martin, Pierre; Ravaioli, Umberto.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 5, No. 1, 30.06.2008, p. 39-42.

Research output: Contribution to journalConference article

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