3D Monte Carlo simulation of current trends and performance in scaled trigate MOSFET

Mohamed Mohamed; Andrés Godoy; Umberto Ravaioli

doi:10.1007/s10825-008-0187-5

3D Monte Carlo simulation of current trends and performance in scaled trigate MOSFET

Mohamed Mohamed, Andrés Godoy, Umberto Ravaioli

Research output: Contribution to journal › Article › peer-review

Abstract

Silicon nanowires with multiple-gates provide better source drain isolation and are thought to be the most promising candidate to replace bulk Si MOSFETs as we downscale deep into the nanometer regime. In this study we utilize a 3D full-band particle Monte Carlo (MOCA3D) simulator to investigate the performance and current trends of fully-depleted Trigate MOSFETs with different cross-sections. Results indicate that as we reduce the cross-section, the increased coupling between the top and lateral gates reduces the channel potential in different axes. In addition, device current normalized with respect to the Trigate perimeter alleviates as we scale the cross-section.

Original language	English (US)
Pages (from-to)	217-221
Number of pages	5
Journal	Journal of Computational Electronics
Volume	7
Issue number	3
DOIs	https://doi.org/10.1007/s10825-008-0187-5
State	Published - 2008

Keywords

Lateral scalability
MOSFET
Trigate
Volume inversion

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Modeling and Simulation
Electrical and Electronic Engineering

Online availability

10.1007/s10825-008-0187-5

Library availability

Discover UIUC Full Text

Cite this

@article{8d790f9eaa974e199d226e78598570b4,

title = "3D Monte Carlo simulation of current trends and performance in scaled trigate MOSFET",

abstract = "Silicon nanowires with multiple-gates provide better source drain isolation and are thought to be the most promising candidate to replace bulk Si MOSFETs as we downscale deep into the nanometer regime. In this study we utilize a 3D full-band particle Monte Carlo (MOCA3D) simulator to investigate the performance and current trends of fully-depleted Trigate MOSFETs with different cross-sections. Results indicate that as we reduce the cross-section, the increased coupling between the top and lateral gates reduces the channel potential in different axes. In addition, device current normalized with respect to the Trigate perimeter alleviates as we scale the cross-section.",

keywords = "Lateral scalability, MOSFET, Trigate, Volume inversion",

author = "Mohamed Mohamed and Andr{\'e}s Godoy and Umberto Ravaioli",

note = "Funding Information: Acknowledgement This work has been supported by the Spanish Government project FIS-2005-6832 and Junta de Andalucia Project TIC-00831, DFI graduate fellowship, and NSF grant SBC PU #501-1045-01.",

year = "2008",

doi = "10.1007/s10825-008-0187-5",

language = "English (US)",

volume = "7",

pages = "217--221",

journal = "Journal of Computational Electronics",

issn = "1569-8025",

publisher = "Springer",

number = "3",

}

TY - JOUR

T1 - 3D Monte Carlo simulation of current trends and performance in scaled trigate MOSFET

AU - Mohamed, Mohamed

AU - Godoy, Andrés

AU - Ravaioli, Umberto

N1 - Funding Information: Acknowledgement This work has been supported by the Spanish Government project FIS-2005-6832 and Junta de Andalucia Project TIC-00831, DFI graduate fellowship, and NSF grant SBC PU #501-1045-01.

PY - 2008

Y1 - 2008

N2 - Silicon nanowires with multiple-gates provide better source drain isolation and are thought to be the most promising candidate to replace bulk Si MOSFETs as we downscale deep into the nanometer regime. In this study we utilize a 3D full-band particle Monte Carlo (MOCA3D) simulator to investigate the performance and current trends of fully-depleted Trigate MOSFETs with different cross-sections. Results indicate that as we reduce the cross-section, the increased coupling between the top and lateral gates reduces the channel potential in different axes. In addition, device current normalized with respect to the Trigate perimeter alleviates as we scale the cross-section.

AB - Silicon nanowires with multiple-gates provide better source drain isolation and are thought to be the most promising candidate to replace bulk Si MOSFETs as we downscale deep into the nanometer regime. In this study we utilize a 3D full-band particle Monte Carlo (MOCA3D) simulator to investigate the performance and current trends of fully-depleted Trigate MOSFETs with different cross-sections. Results indicate that as we reduce the cross-section, the increased coupling between the top and lateral gates reduces the channel potential in different axes. In addition, device current normalized with respect to the Trigate perimeter alleviates as we scale the cross-section.

KW - Lateral scalability

KW - MOSFET

KW - Trigate

KW - Volume inversion

UR - http://www.scopus.com/inward/record.url?scp=50949117771&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=50949117771&partnerID=8YFLogxK

U2 - 10.1007/s10825-008-0187-5

DO - 10.1007/s10825-008-0187-5

M3 - Article

AN - SCOPUS:50949117771

SN - 1569-8025

VL - 7

SP - 217

EP - 221

JO - Journal of Computational Electronics

JF - Journal of Computational Electronics

IS - 3

ER -

3D Monte Carlo simulation of current trends and performance in scaled trigate MOSFET

Abstract

Keywords

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this