Silicon nanowires with multiple-gates provide better source drain isolation and are thought to be the most promising candidate to replace bulk Si MOSFETs as we downscale deep into the nanometer regime. In this study we utilize a 3D full-band particle Monte Carlo (MOCA3D) simulator to investigate the performance and current trends of fully-depleted Trigate MOSFETs with different cross-sections. Results indicate that as we reduce the cross-section, the increased coupling between the top and lateral gates reduces the channel potential in different axes. In addition, device current normalized with respect to the Trigate perimeter alleviates as we scale the cross-section.
- Lateral scalability
- Volume inversion
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Modeling and Simulation
- Electrical and Electronic Engineering