3D Monte Carlo simulation of current trends and performance in scaled trigate MOSFET

Mohamed Mohamed, Andrés Godoy, Umberto Ravaioli

Research output: Contribution to journalArticle

Abstract

Silicon nanowires with multiple-gates provide better source drain isolation and are thought to be the most promising candidate to replace bulk Si MOSFETs as we downscale deep into the nanometer regime. In this study we utilize a 3D full-band particle Monte Carlo (MOCA3D) simulator to investigate the performance and current trends of fully-depleted Trigate MOSFETs with different cross-sections. Results indicate that as we reduce the cross-section, the increased coupling between the top and lateral gates reduces the channel potential in different axes. In addition, device current normalized with respect to the Trigate perimeter alleviates as we scale the cross-section.

Original languageEnglish (US)
Pages (from-to)217-221
Number of pages5
JournalJournal of Computational Electronics
Volume7
Issue number3
DOIs
StatePublished - Jan 30 2008

Fingerprint

MOSFET
Silicon
Nanowires
Cross section
field effect transistors
Monte Carlo Simulation
Simulators
trends
cross sections
Silicon Nanowires
simulation
Perimeter
simulators
Isolation
Lateral
isolation
Simulator
nanowires
silicon
Trends

Keywords

  • Lateral scalability
  • MOSFET
  • Trigate
  • Volume inversion

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering

Cite this

3D Monte Carlo simulation of current trends and performance in scaled trigate MOSFET. / Mohamed, Mohamed; Godoy, Andrés; Ravaioli, Umberto.

In: Journal of Computational Electronics, Vol. 7, No. 3, 30.01.2008, p. 217-221.

Research output: Contribution to journalArticle

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