300 GHz InP DHBT large signal model including current blocking effect and validated by Gilbert multiplier circuits

J. W. Lai, D. Caruth, Y. J. Chuang, K. Cimino, R. Elder, D. Jansen, F. Stroili, M. Le, Milton Feng

Research output: Contribution to journalConference article

Abstract

This paper describes a modeling approach for Vitesse VIP2 300 GHz InP/InGaAs DHBT technology, including the nonlinear effects in base-collector region covering current blocking, velocity modulation and self-heating. Model is verified in terms of single devices and integrated circuits. Good model fitting to measured DC and s-parameters data from single HBTs is achieved, and several circuits based on Gilbert multiplier are designed for the purposes of model validation and high-speed applications. Nonlinear properties of these circuits are measured and compared with the simulation results from different bipolar transistor models. The variable gain amplifier reported in this paper achieves the highest gain-bandwidth product of over 520 GHz under the limitation of measurement capability.

Original languageEnglish (US)
Article numberD.2
Pages (from-to)61-64
Number of pages4
JournalTechnical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
StatePublished - Dec 1 2005
Event2005 IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC - Palm Springs, CA, United States
Duration: Oct 30 2005Nov 2 2005

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Networks (circuits)
Bipolar transistors
Heterojunction bipolar transistors
Integrated circuits
Modulation
Bandwidth
Heating
Variable gain amplifiers

Keywords

  • Heterojunction bipolar transistors
  • High-frequency amplifiers
  • High-speed integrated circuits

ASJC Scopus subject areas

  • Engineering(all)

Cite this

300 GHz InP DHBT large signal model including current blocking effect and validated by Gilbert multiplier circuits. / Lai, J. W.; Caruth, D.; Chuang, Y. J.; Cimino, K.; Elder, R.; Jansen, D.; Stroili, F.; Le, M.; Feng, Milton.

In: Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC, 01.12.2005, p. 61-64.

Research output: Contribution to journalConference article

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AU - Caruth, D.

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AU - Elder, R.

AU - Jansen, D.

AU - Stroili, F.

AU - Le, M.

AU - Feng, Milton

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AB - This paper describes a modeling approach for Vitesse VIP2 300 GHz InP/InGaAs DHBT technology, including the nonlinear effects in base-collector region covering current blocking, velocity modulation and self-heating. Model is verified in terms of single devices and integrated circuits. Good model fitting to measured DC and s-parameters data from single HBTs is achieved, and several circuits based on Gilbert multiplier are designed for the purposes of model validation and high-speed applications. Nonlinear properties of these circuits are measured and compared with the simulation results from different bipolar transistor models. The variable gain amplifier reported in this paper achieves the highest gain-bandwidth product of over 520 GHz under the limitation of measurement capability.

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