Abstract
This paper describes a modeling approach for Vitesse VIP2 300 GHz InP/InGaAs DHBT technology, including the nonlinear effects in base-collector region covering current blocking, velocity modulation and self-heating. Model is verified in terms of single devices and integrated circuits. Good model fitting to measured DC and s-parameters data from single HBTs is achieved, and several circuits based on Gilbert multiplier are designed for the purposes of model validation and high-speed applications. Nonlinear properties of these circuits are measured and compared with the simulation results from different bipolar transistor models. The variable gain amplifier reported in this paper achieves the highest gain-bandwidth product of over 520 GHz under the limitation of measurement capability.
| Original language | English (US) |
|---|---|
| Article number | D.2 |
| Pages (from-to) | 61-64 |
| Number of pages | 4 |
| Journal | Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC |
| State | Published - Dec 1 2005 |
| Event | 2005 IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC - Palm Springs, CA, United States Duration: Oct 30 2005 → Nov 2 2005 |
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Keywords
- Heterojunction bipolar transistors
- High-frequency amplifiers
- High-speed integrated circuits
ASJC Scopus subject areas
- Engineering(all)
Cite this
300 GHz InP DHBT large signal model including current blocking effect and validated by Gilbert multiplier circuits. / Lai, J. W.; Caruth, D.; Chuang, Y. J.; Cimino, K.; Elder, R.; Jansen, D.; Stroili, F.; Le, M.; Feng, Milton.
In: Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC, 01.12.2005, p. 61-64.Research output: Contribution to journal › Conference article
}
TY - JOUR
T1 - 300 GHz InP DHBT large signal model including current blocking effect and validated by Gilbert multiplier circuits
AU - Lai, J. W.
AU - Caruth, D.
AU - Chuang, Y. J.
AU - Cimino, K.
AU - Elder, R.
AU - Jansen, D.
AU - Stroili, F.
AU - Le, M.
AU - Feng, Milton
PY - 2005/12/1
Y1 - 2005/12/1
N2 - This paper describes a modeling approach for Vitesse VIP2 300 GHz InP/InGaAs DHBT technology, including the nonlinear effects in base-collector region covering current blocking, velocity modulation and self-heating. Model is verified in terms of single devices and integrated circuits. Good model fitting to measured DC and s-parameters data from single HBTs is achieved, and several circuits based on Gilbert multiplier are designed for the purposes of model validation and high-speed applications. Nonlinear properties of these circuits are measured and compared with the simulation results from different bipolar transistor models. The variable gain amplifier reported in this paper achieves the highest gain-bandwidth product of over 520 GHz under the limitation of measurement capability.
AB - This paper describes a modeling approach for Vitesse VIP2 300 GHz InP/InGaAs DHBT technology, including the nonlinear effects in base-collector region covering current blocking, velocity modulation and self-heating. Model is verified in terms of single devices and integrated circuits. Good model fitting to measured DC and s-parameters data from single HBTs is achieved, and several circuits based on Gilbert multiplier are designed for the purposes of model validation and high-speed applications. Nonlinear properties of these circuits are measured and compared with the simulation results from different bipolar transistor models. The variable gain amplifier reported in this paper achieves the highest gain-bandwidth product of over 520 GHz under the limitation of measurement capability.
KW - Heterojunction bipolar transistors
KW - High-frequency amplifiers
KW - High-speed integrated circuits
UR - http://www.scopus.com/inward/record.url?scp=30944455720&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=30944455720&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:30944455720
SP - 61
EP - 64
JO - Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
JF - Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
SN - 1550-8781
M1 - D.2
ER -