300 GHz InP DHBT large signal model including current blocking effect and validated by Gilbert multiplier circuits

J. W. Lai; D. Caruth; Y. J. Chuang; K. Cimino; R. Elder; D. Jansen; F. Stroili; M. Le; M. Feng

300 GHz InP DHBT large signal model including current blocking effect and validated by Gilbert multiplier circuits

J. W. Lai, D. Caruth, Y. J. Chuang, K. Cimino, R. Elder, D. Jansen, F. Stroili, M. Le, M. Feng

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

This paper describes a modeling approach for Vitesse VIP2 300 GHz InP/InGaAs DHBT technology, including the nonlinear effects in base-collector region covering current blocking, velocity modulation and self-heating. Model is verified in terms of single devices and integrated circuits. Good model fitting to measured DC and s-parameters data from single HBTs is achieved, and several circuits based on Gilbert multiplier are designed for the purposes of model validation and high-speed applications. Nonlinear properties of these circuits are measured and compared with the simulation results from different bipolar transistor models. The variable gain amplifier reported in this paper achieves the highest gain-bandwidth product of over 520 GHz under the limitation of measurement capability.

Original language	English (US)
Article number	D.2
Pages (from-to)	61-64
Number of pages	4
Journal	Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
State	Published - Dec 1 2005
Event	2005 IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC - Palm Springs, CA, United States Duration: Oct 30 2005 → Nov 2 2005

Keywords

Heterojunction bipolar transistors
High-frequency amplifiers
High-speed integrated circuits

ASJC Scopus subject areas

Engineering(all)

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300 GHz InP DHBT large signal model including current blocking effect and validated by Gilbert multiplier circuits. / Lai, J. W.; Caruth, D.; Chuang, Y. J.; Cimino, K.; Elder, R.; Jansen, D.; Stroili, F.; Le, M.; Feng, M.

In: Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC, 01.12.2005, p. 61-64.

Research output: Contribution to journal › Conference article › peer-review

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abstract = "This paper describes a modeling approach for Vitesse VIP2 300 GHz InP/InGaAs DHBT technology, including the nonlinear effects in base-collector region covering current blocking, velocity modulation and self-heating. Model is verified in terms of single devices and integrated circuits. Good model fitting to measured DC and s-parameters data from single HBTs is achieved, and several circuits based on Gilbert multiplier are designed for the purposes of model validation and high-speed applications. Nonlinear properties of these circuits are measured and compared with the simulation results from different bipolar transistor models. The variable gain amplifier reported in this paper achieves the highest gain-bandwidth product of over 520 GHz under the limitation of measurement capability.",

keywords = "Heterojunction bipolar transistors, High-frequency amplifiers, High-speed integrated circuits",

author = "Lai, {J. W.} and D. Caruth and Chuang, {Y. J.} and K. Cimino and R. Elder and D. Jansen and F. Stroili and M. Le and M. Feng",

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T1 - 300 GHz InP DHBT large signal model including current blocking effect and validated by Gilbert multiplier circuits

AU - Lai, J. W.

AU - Caruth, D.

AU - Chuang, Y. J.

AU - Cimino, K.

AU - Elder, R.

AU - Jansen, D.

AU - Stroili, F.

AU - Le, M.

AU - Feng, M.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - This paper describes a modeling approach for Vitesse VIP2 300 GHz InP/InGaAs DHBT technology, including the nonlinear effects in base-collector region covering current blocking, velocity modulation and self-heating. Model is verified in terms of single devices and integrated circuits. Good model fitting to measured DC and s-parameters data from single HBTs is achieved, and several circuits based on Gilbert multiplier are designed for the purposes of model validation and high-speed applications. Nonlinear properties of these circuits are measured and compared with the simulation results from different bipolar transistor models. The variable gain amplifier reported in this paper achieves the highest gain-bandwidth product of over 520 GHz under the limitation of measurement capability.

AB - This paper describes a modeling approach for Vitesse VIP2 300 GHz InP/InGaAs DHBT technology, including the nonlinear effects in base-collector region covering current blocking, velocity modulation and self-heating. Model is verified in terms of single devices and integrated circuits. Good model fitting to measured DC and s-parameters data from single HBTs is achieved, and several circuits based on Gilbert multiplier are designed for the purposes of model validation and high-speed applications. Nonlinear properties of these circuits are measured and compared with the simulation results from different bipolar transistor models. The variable gain amplifier reported in this paper achieves the highest gain-bandwidth product of over 520 GHz under the limitation of measurement capability.

KW - Heterojunction bipolar transistors

KW - High-frequency amplifiers

KW - High-speed integrated circuits

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JO - Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

JF - Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

SN - 1550-8781

M1 - D.2

T2 - 2005 IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC

Y2 - 30 October 2005 through 2 November 2005

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300 GHz InP DHBT large signal model including current blocking effect and validated by Gilbert multiplier circuits

Abstract

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