3-D simulation of directional transport in coupled nanoscale MOS channels

D. Guan; U. Ravaioli

doi:10.1016/S0921-4526(01)01416-8

3-D simulation of directional transport in coupled nanoscale MOS channels

D. Guan
, U. Ravaioli

Research output: Contribution to journal › Article › peer-review

Abstract

The directional properties in coupled MOS channels are studied using a non-equilibrium Green's function (NEGF) method coupled with Poisson equation for self-consistency. Acoustic scattering and lowest order inter-valley optical scattering are included through self-energy terms in Green's function. The simulations show that, by changing the voltage on control gates, carrier conductance can be switched from one channel to the other with an on/off ratio of up to ≈ 10⁵.

Original language	English (US)
Pages (from-to)	372-376
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	314
Issue number	1-4
DOIs	https://doi.org/10.1016/S0921-4526(01)01416-8
State	Published - Mar 2002

Keywords

Green's functions
Quantum transport
Semiconductor devices

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Online availability

10.1016/S0921-4526(01)01416-8

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title = "3-D simulation of directional transport in coupled nanoscale MOS channels",

abstract = "The directional properties in coupled MOS channels are studied using a non-equilibrium Green's function (NEGF) method coupled with Poisson equation for self-consistency. Acoustic scattering and lowest order inter-valley optical scattering are included through self-energy terms in Green's function. The simulations show that, by changing the voltage on control gates, carrier conductance can be switched from one channel to the other with an on/off ratio of up to ≈ 105.",

keywords = "Green's functions, Quantum transport, Semiconductor devices",

author = "D. Guan and U. Ravaioli",

note = "This work was partially supported by the Distributed Center for Advanced Electronics Simulation (DesCArtES) through National Science Foundation grant ECS 98-02730, and by a DURINT Nanotechnology contract of the Army Research Office.",

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AU - Guan, D.

AU - Ravaioli, U.

N1 - This work was partially supported by the Distributed Center for Advanced Electronics Simulation (DesCArtES) through National Science Foundation grant ECS 98-02730, and by a DURINT Nanotechnology contract of the Army Research Office.

PY - 2002/3

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N2 - The directional properties in coupled MOS channels are studied using a non-equilibrium Green's function (NEGF) method coupled with Poisson equation for self-consistency. Acoustic scattering and lowest order inter-valley optical scattering are included through self-energy terms in Green's function. The simulations show that, by changing the voltage on control gates, carrier conductance can be switched from one channel to the other with an on/off ratio of up to ≈ 105.

AB - The directional properties in coupled MOS channels are studied using a non-equilibrium Green's function (NEGF) method coupled with Poisson equation for self-consistency. Acoustic scattering and lowest order inter-valley optical scattering are included through self-energy terms in Green's function. The simulations show that, by changing the voltage on control gates, carrier conductance can be switched from one channel to the other with an on/off ratio of up to ≈ 105.

KW - Green's functions

KW - Quantum transport

KW - Semiconductor devices

UR - https://www.scopus.com/pages/publications/0036503415

UR - https://www.scopus.com/pages/publications/0036503415#tab=citedBy

U2 - 10.1016/S0921-4526(01)01416-8

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JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-4

ER -

3-D simulation of directional transport in coupled nanoscale MOS channels

Abstract

Keywords

ASJC Scopus subject areas

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