3-D Parallel Monte Carlo Simulation of Sub-0.1 Micron MOSFETs on a Cluster Based Supercomputer

Asim Kepkep, Umberto Ravaioli

Research output: Contribution to journalArticle

Abstract

A full band, three-dimensional, Monte Carlo simulator for deep sub-micron Si MOSFET like devices has been developed, with the goal to obtain optimal performance on a parallel system built from a cluster of commodity computers. A short-range carrier-carrier and carrier-ion model has been implemented within this framework, using Particle-Particle Particle-Mesh (P3M) algorithm. Test simulations include the 90 nm “well-tempered MOSFET” for which measurements are available. Simulation benchmarks have identified several factors limiting the overall performance of the code and suggestions for improvements in these areas are made.

Original languageEnglish (US)
Pages (from-to)171-174
Number of pages4
JournalJournal of Computational Electronics
Volume1
Issue number1-2
DOIs
StatePublished - Jul 1 2002

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supercomputers
MOSFET
Parallel Simulation
Supercomputers
Supercomputer
3D
field effect transistors
Monte Carlo Simulation
Simulators
Ions
commodities
simulation
Parallel Systems
simulators
suggestion
mesh
Simulation
Simulator
Limiting
Mesh

Keywords

  • MOSFET
  • Monte Carlo methods
  • parallelization

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering

Cite this

3-D Parallel Monte Carlo Simulation of Sub-0.1 Micron MOSFETs on a Cluster Based Supercomputer. / Kepkep, Asim; Ravaioli, Umberto.

In: Journal of Computational Electronics, Vol. 1, No. 1-2, 01.07.2002, p. 171-174.

Research output: Contribution to journalArticle

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