Abstract
A full band, three-dimensional, Monte Carlo simulator for deep sub-micron Si MOSFET like devices has been developed, with the goal to obtain optimal performance on a parallel system built from a cluster of commodity computers. A short-range carrier-carrier and carrier-ion model has been implemented within this framework, using Particle-Particle Particle-Mesh (P3M) algorithm. Test simulations include the 90 nm “well-tempered MOSFET” for which measurements are available. Simulation benchmarks have identified several factors limiting the overall performance of the code and suggestions for improvements in these areas are made.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 171-174 |
| Number of pages | 4 |
| Journal | Journal of Computational Electronics |
| Volume | 1 |
| Issue number | 1-2 |
| DOIs | |
| State | Published - Jul 1 2002 |
Keywords
- MOSFET
- Monte Carlo methods
- parallelization
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Modeling and Simulation
- Electrical and Electronic Engineering