3-D Monte Carlo Simulations of FinFETs

A new 3-D Monte Carlo simulator has been developed to simulate ultra-small semiconductor devices. Quantum corrections are introduced by self-consistently coupling a 2-D Schrödinger solver with the 3-D simulator. Results obtained from the simulation of FinFET devices using this simulator indicate that the charge density at the corners of these devices is reduced greatly by quantization effects. The line charge density changes only slightly under quantum corrections. The effects of fin-extension length on the device behavior of FinFETs are also presented.