3-D Monte Carlo Simulations of FinFETs

Gulzar A. Kathawala, Umberto Ravaioli

Research output: Contribution to journalConference article

Abstract

A new 3-D Monte Carlo simulator has been developed to simulate ultra-small semiconductor devices. Quantum corrections are introduced by self-consistently coupling a 2-D Schrödinger solver with the 3-D simulator. Results obtained from the simulation of FinFET devices using this simulator indicate that the charge density at the corners of these devices is reduced greatly by quantization effects. The line charge density changes only slightly under quantum corrections. The effects of fin-extension length on the device behavior of FinFETs are also presented.

Original languageEnglish (US)
Pages (from-to)683-686
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - Dec 1 2003
EventIEEE International Electron Devices Meeting - Washington, DC, United States
Duration: Dec 8 2003Dec 10 2003

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simulators
Simulators
Charge density
simulation
fins
Semiconductor devices
semiconductor devices
Monte Carlo simulation
FinFET

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

3-D Monte Carlo Simulations of FinFETs. / Kathawala, Gulzar A.; Ravaioli, Umberto.

In: Technical Digest - International Electron Devices Meeting, 01.12.2003, p. 683-686.

Research output: Contribution to journalConference article

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