3-D heterogeneous electronics by transfer printing

Christopher A. Bower, Etienne Menard, Joseph Carr, John A. Rogers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Here we describe an approach, called transfer printing, to allow the combination of broad classes of materials into three-dimensional (3-D) heterogeneously integrated electronic devices. The process involves fabrication of source wafers that contain high performance single crystal devices from materials including, but not limited to, silicon, gallium arsenide and gallium nitride. These devices are then delineated and transferred to a target substrate using an elastomeric stamp. The transferred devices are then interconnected to underlying circuitry and the process is repeated to build up a 3-D stack. This talk will describe the transfer printing, process and will discuss examples of 3-D heterogeneous circuits that have been fabricated. The merits and challenges of transfer printing will be discussed, along with a description of ideal applications for transfer printing of high performance electronics.

Original languageEnglish (US)
Title of host publication2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers
DOIs
StatePublished - Sep 26 2007
Event2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Hsinchu, Taiwan, Province of China
Duration: Apr 23 2007Apr 25 2007

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Other

Other2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
CountryTaiwan, Province of China
CityHsinchu
Period4/23/074/25/07

Fingerprint

printing
Printing
Electronic equipment
electronics
Gallium nitride
Gallium arsenide
gallium nitrides
Silicon
gallium
nitrides
Single crystals
wafers
Fabrication
fabrication
Networks (circuits)
single crystals
silicon
Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Bower, C. A., Menard, E., Carr, J., & Rogers, J. A. (2007). 3-D heterogeneous electronics by transfer printing. In 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers [4239490] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2007.378922

3-D heterogeneous electronics by transfer printing. / Bower, Christopher A.; Menard, Etienne; Carr, Joseph; Rogers, John A.

2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers. 2007. 4239490 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bower, CA, Menard, E, Carr, J & Rogers, JA 2007, 3-D heterogeneous electronics by transfer printing. in 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers., 4239490, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA, Hsinchu, Taiwan, Province of China, 4/23/07. https://doi.org/10.1109/VTSA.2007.378922
Bower CA, Menard E, Carr J, Rogers JA. 3-D heterogeneous electronics by transfer printing. In 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers. 2007. 4239490. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2007.378922
Bower, Christopher A. ; Menard, Etienne ; Carr, Joseph ; Rogers, John A. / 3-D heterogeneous electronics by transfer printing. 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers. 2007. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).
@inproceedings{8646af2c52d24248a7d6efa7386d70da,
title = "3-D heterogeneous electronics by transfer printing",
abstract = "Here we describe an approach, called transfer printing, to allow the combination of broad classes of materials into three-dimensional (3-D) heterogeneously integrated electronic devices. The process involves fabrication of source wafers that contain high performance single crystal devices from materials including, but not limited to, silicon, gallium arsenide and gallium nitride. These devices are then delineated and transferred to a target substrate using an elastomeric stamp. The transferred devices are then interconnected to underlying circuitry and the process is repeated to build up a 3-D stack. This talk will describe the transfer printing, process and will discuss examples of 3-D heterogeneous circuits that have been fabricated. The merits and challenges of transfer printing will be discussed, along with a description of ideal applications for transfer printing of high performance electronics.",
author = "Bower, {Christopher A.} and Etienne Menard and Joseph Carr and Rogers, {John A.}",
year = "2007",
month = "9",
day = "26",
doi = "10.1109/VTSA.2007.378922",
language = "English (US)",
isbn = "1424405858",
series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",
booktitle = "2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers",

}

TY - GEN

T1 - 3-D heterogeneous electronics by transfer printing

AU - Bower, Christopher A.

AU - Menard, Etienne

AU - Carr, Joseph

AU - Rogers, John A.

PY - 2007/9/26

Y1 - 2007/9/26

N2 - Here we describe an approach, called transfer printing, to allow the combination of broad classes of materials into three-dimensional (3-D) heterogeneously integrated electronic devices. The process involves fabrication of source wafers that contain high performance single crystal devices from materials including, but not limited to, silicon, gallium arsenide and gallium nitride. These devices are then delineated and transferred to a target substrate using an elastomeric stamp. The transferred devices are then interconnected to underlying circuitry and the process is repeated to build up a 3-D stack. This talk will describe the transfer printing, process and will discuss examples of 3-D heterogeneous circuits that have been fabricated. The merits and challenges of transfer printing will be discussed, along with a description of ideal applications for transfer printing of high performance electronics.

AB - Here we describe an approach, called transfer printing, to allow the combination of broad classes of materials into three-dimensional (3-D) heterogeneously integrated electronic devices. The process involves fabrication of source wafers that contain high performance single crystal devices from materials including, but not limited to, silicon, gallium arsenide and gallium nitride. These devices are then delineated and transferred to a target substrate using an elastomeric stamp. The transferred devices are then interconnected to underlying circuitry and the process is repeated to build up a 3-D stack. This talk will describe the transfer printing, process and will discuss examples of 3-D heterogeneous circuits that have been fabricated. The merits and challenges of transfer printing will be discussed, along with a description of ideal applications for transfer printing of high performance electronics.

UR - http://www.scopus.com/inward/record.url?scp=34548863350&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34548863350&partnerID=8YFLogxK

U2 - 10.1109/VTSA.2007.378922

DO - 10.1109/VTSA.2007.378922

M3 - Conference contribution

AN - SCOPUS:34548863350

SN - 1424405858

SN - 9781424405855

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

BT - 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers

ER -