Abstract
A 3-D ensemble Monte Carlo (EMC) simulation with granular doping is implemented and simulations on a 50 nm channel length n-MOSFET are compared with results from 2- and 3-D simulations with continuous doping profiles. Granular simulations treat ionized acceptors in the channel discretely and the electron-ion interaction is calculated with a particle-particle-particle-mesh (P3M) algorithm. Steady-state results for the electric field and electron velocities along the oxide interface are compared under strong inversion. Preliminary results indicate that 3-D Coulomb and granular effects in the channel have limited impact on transport in MOSFETs in the strong inversion case, but that the P3M-EMC method shows promise for evaluating short-range effects including carrier-ion and carrier-carrier effects in subthreshold conditions where the impact of granularity should be larger.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 568-571 |
| Number of pages | 4 |
| Journal | Physica B: Condensed Matter |
| Volume | 272 |
| Issue number | 1-4 |
| DOIs | |
| State | Published - Dec 1 1999 |
| Event | Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn Duration: Jul 19 1999 → Jul 23 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering