3-D granular Monte Carlo simulation of silicon n-MOSFETs

C. J. Wordelman, U. Ravaioli

Research output: Contribution to journalConference articlepeer-review


A 3-D ensemble Monte Carlo (EMC) simulation with granular doping is implemented and simulations on a 50 nm channel length n-MOSFET are compared with results from 2- and 3-D simulations with continuous doping profiles. Granular simulations treat ionized acceptors in the channel discretely and the electron-ion interaction is calculated with a particle-particle-particle-mesh (P3M) algorithm. Steady-state results for the electric field and electron velocities along the oxide interface are compared under strong inversion. Preliminary results indicate that 3-D Coulomb and granular effects in the channel have limited impact on transport in MOSFETs in the strong inversion case, but that the P3M-EMC method shows promise for evaluating short-range effects including carrier-ion and carrier-carrier effects in subthreshold conditions where the impact of granularity should be larger.

Original languageEnglish (US)
Pages (from-to)568-571
Number of pages4
JournalPhysica B: Condensed Matter
Issue number1-4
StatePublished - Dec 1 1999
EventProceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn
Duration: Jul 19 1999Jul 23 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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