3-D granular Monte Carlo simulation of silicon n-MOSFETs

C. J. Wordelman, Umberto Ravaioli

Research output: Contribution to journalConference article

Abstract

A 3-D ensemble Monte Carlo (EMC) simulation with granular doping is implemented and simulations on a 50 nm channel length n-MOSFET are compared with results from 2- and 3-D simulations with continuous doping profiles. Granular simulations treat ionized acceptors in the channel discretely and the electron-ion interaction is calculated with a particle-particle-particle-mesh (P3M) algorithm. Steady-state results for the electric field and electron velocities along the oxide interface are compared under strong inversion. Preliminary results indicate that 3-D Coulomb and granular effects in the channel have limited impact on transport in MOSFETs in the strong inversion case, but that the P3M-EMC method shows promise for evaluating short-range effects including carrier-ion and carrier-carrier effects in subthreshold conditions where the impact of granularity should be larger.

Original languageEnglish (US)
Pages (from-to)568-571
Number of pages4
JournalPhysica B: Condensed Matter
Volume272
Issue number1-4
DOIs
StatePublished - Dec 1 1999
EventProceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn
Duration: Jul 19 1999Jul 23 1999

Fingerprint

Silicon
field effect transistors
Doping (additives)
Ions
Electrons
silicon
Oxides
Monte Carlo methods
simulation
Electric fields
inversions
Monte Carlo method
mesh
ions
electrons
oxides
electric fields
Monte Carlo simulation
profiles
interactions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

3-D granular Monte Carlo simulation of silicon n-MOSFETs. / Wordelman, C. J.; Ravaioli, Umberto.

In: Physica B: Condensed Matter, Vol. 272, No. 1-4, 01.12.1999, p. 568-571.

Research output: Contribution to journalConference article

@article{51b42226ecc34869a650eccda1f057ef,
title = "3-D granular Monte Carlo simulation of silicon n-MOSFETs",
abstract = "A 3-D ensemble Monte Carlo (EMC) simulation with granular doping is implemented and simulations on a 50 nm channel length n-MOSFET are compared with results from 2- and 3-D simulations with continuous doping profiles. Granular simulations treat ionized acceptors in the channel discretely and the electron-ion interaction is calculated with a particle-particle-particle-mesh (P3M) algorithm. Steady-state results for the electric field and electron velocities along the oxide interface are compared under strong inversion. Preliminary results indicate that 3-D Coulomb and granular effects in the channel have limited impact on transport in MOSFETs in the strong inversion case, but that the P3M-EMC method shows promise for evaluating short-range effects including carrier-ion and carrier-carrier effects in subthreshold conditions where the impact of granularity should be larger.",
author = "Wordelman, {C. J.} and Umberto Ravaioli",
year = "1999",
month = "12",
day = "1",
doi = "10.1016/S0921-4526(99)00340-3",
language = "English (US)",
volume = "272",
pages = "568--571",
journal = "Physica B: Condensed Matter",
issn = "0921-4526",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - 3-D granular Monte Carlo simulation of silicon n-MOSFETs

AU - Wordelman, C. J.

AU - Ravaioli, Umberto

PY - 1999/12/1

Y1 - 1999/12/1

N2 - A 3-D ensemble Monte Carlo (EMC) simulation with granular doping is implemented and simulations on a 50 nm channel length n-MOSFET are compared with results from 2- and 3-D simulations with continuous doping profiles. Granular simulations treat ionized acceptors in the channel discretely and the electron-ion interaction is calculated with a particle-particle-particle-mesh (P3M) algorithm. Steady-state results for the electric field and electron velocities along the oxide interface are compared under strong inversion. Preliminary results indicate that 3-D Coulomb and granular effects in the channel have limited impact on transport in MOSFETs in the strong inversion case, but that the P3M-EMC method shows promise for evaluating short-range effects including carrier-ion and carrier-carrier effects in subthreshold conditions where the impact of granularity should be larger.

AB - A 3-D ensemble Monte Carlo (EMC) simulation with granular doping is implemented and simulations on a 50 nm channel length n-MOSFET are compared with results from 2- and 3-D simulations with continuous doping profiles. Granular simulations treat ionized acceptors in the channel discretely and the electron-ion interaction is calculated with a particle-particle-particle-mesh (P3M) algorithm. Steady-state results for the electric field and electron velocities along the oxide interface are compared under strong inversion. Preliminary results indicate that 3-D Coulomb and granular effects in the channel have limited impact on transport in MOSFETs in the strong inversion case, but that the P3M-EMC method shows promise for evaluating short-range effects including carrier-ion and carrier-carrier effects in subthreshold conditions where the impact of granularity should be larger.

UR - http://www.scopus.com/inward/record.url?scp=0033341260&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033341260&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(99)00340-3

DO - 10.1016/S0921-4526(99)00340-3

M3 - Conference article

AN - SCOPUS:0033341260

VL - 272

SP - 568

EP - 571

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - 1-4

ER -