3-D computer simulation of single-electron charging in silicon nanocrystal floating gate flash memory devices

A. Thean, J. P. Leburton

Research output: Contribution to journalArticle

Abstract

The operation of a silicon nanocrystal quantum-dot based flash memory device is simulated numerically with emphasis on energy and charge quantization in the quantum-dot. The simulation involves the self-consistent solution of three-dimensional (3-D) Poisson and Schrödinger-like equations, with the Slater rule for determining the charging voltage. We also compute the capacitance-voltage characteristics of the device and derive the threshold voltage, VT, variation with single-electron charging as a function of design parameters.

Original languageEnglish (US)
Pages (from-to)148-150
Number of pages3
JournalIEEE Electron Device Letters
Volume22
Issue number3
DOIs
StatePublished - Mar 1 2001

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Keywords

  • Computer modeling
  • Flash memory
  • Silicon nanocrystal
  • Single-electron charging

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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