3-D computer simulation of single-electron charging in silicon nanocrystal floating gate flash memory devices

A. Thean, J. P. Leburton

Research output: Contribution to journalArticle

Abstract

The operation of a silicon nanocrystal quantum-dot based flash memory device is simulated numerically with emphasis on energy and charge quantization in the quantum-dot. The simulation involves the self-consistent solution of three-dimensional (3-D) Poisson and Schrödinger-like equations, with the Slater rule for determining the charging voltage. We also compute the capacitance-voltage characteristics of the device and derive the threshold voltage, VT, variation with single-electron charging as a function of design parameters.

Original languageEnglish (US)
Pages (from-to)148-150
Number of pages3
JournalIEEE Electron Device Letters
Volume22
Issue number3
DOIs
StatePublished - Mar 1 2001

Fingerprint

Flash memory
Nanocrystals
Semiconductor quantum dots
Data storage equipment
Silicon
Electrons
Computer simulation
Electric potential
Threshold voltage
Capacitance

Keywords

  • Computer modeling
  • Flash memory
  • Silicon nanocrystal
  • Single-electron charging

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

3-D computer simulation of single-electron charging in silicon nanocrystal floating gate flash memory devices. / Thean, A.; Leburton, J. P.

In: IEEE Electron Device Letters, Vol. 22, No. 3, 01.03.2001, p. 148-150.

Research output: Contribution to journalArticle

@article{5d2d8bee23d64c52b06644f844325c90,
title = "3-D computer simulation of single-electron charging in silicon nanocrystal floating gate flash memory devices",
abstract = "The operation of a silicon nanocrystal quantum-dot based flash memory device is simulated numerically with emphasis on energy and charge quantization in the quantum-dot. The simulation involves the self-consistent solution of three-dimensional (3-D) Poisson and Schr{\"o}dinger-like equations, with the Slater rule for determining the charging voltage. We also compute the capacitance-voltage characteristics of the device and derive the threshold voltage, VT, variation with single-electron charging as a function of design parameters.",
keywords = "Computer modeling, Flash memory, Silicon nanocrystal, Single-electron charging",
author = "A. Thean and Leburton, {J. P.}",
year = "2001",
month = "3",
day = "1",
doi = "10.1109/55.910625",
language = "English (US)",
volume = "22",
pages = "148--150",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",

}

TY - JOUR

T1 - 3-D computer simulation of single-electron charging in silicon nanocrystal floating gate flash memory devices

AU - Thean, A.

AU - Leburton, J. P.

PY - 2001/3/1

Y1 - 2001/3/1

N2 - The operation of a silicon nanocrystal quantum-dot based flash memory device is simulated numerically with emphasis on energy and charge quantization in the quantum-dot. The simulation involves the self-consistent solution of three-dimensional (3-D) Poisson and Schrödinger-like equations, with the Slater rule for determining the charging voltage. We also compute the capacitance-voltage characteristics of the device and derive the threshold voltage, VT, variation with single-electron charging as a function of design parameters.

AB - The operation of a silicon nanocrystal quantum-dot based flash memory device is simulated numerically with emphasis on energy and charge quantization in the quantum-dot. The simulation involves the self-consistent solution of three-dimensional (3-D) Poisson and Schrödinger-like equations, with the Slater rule for determining the charging voltage. We also compute the capacitance-voltage characteristics of the device and derive the threshold voltage, VT, variation with single-electron charging as a function of design parameters.

KW - Computer modeling

KW - Flash memory

KW - Silicon nanocrystal

KW - Single-electron charging

UR - http://www.scopus.com/inward/record.url?scp=0035280102&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035280102&partnerID=8YFLogxK

U2 - 10.1109/55.910625

DO - 10.1109/55.910625

M3 - Article

AN - SCOPUS:0035280102

VL - 22

SP - 148

EP - 150

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 3

ER -