3-D computer simulation of single-electron charging in silicon nanocrystal floating gate flash memory devices

A. Thean; J. P. Leburton

doi:10.1109/55.910625

3-D computer simulation of single-electron charging in silicon nanocrystal floating gate flash memory devices

Research output: Contribution to journal › Article › peer-review

Abstract

The operation of a silicon nanocrystal quantum-dot based flash memory device is simulated numerically with emphasis on energy and charge quantization in the quantum-dot. The simulation involves the self-consistent solution of three-dimensional (3-D) Poisson and Schrödinger-like equations, with the Slater rule for determining the charging voltage. We also compute the capacitance-voltage characteristics of the device and derive the threshold voltage, V_T, variation with single-electron charging as a function of design parameters.

Original language	English (US)
Pages (from-to)	148-150
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	22
Issue number	3
DOIs	https://doi.org/10.1109/55.910625
State	Published - Mar 2001

Keywords

Computer modeling
Flash memory
Silicon nanocrystal
Single-electron charging

ASJC Scopus subject areas

Electrical and Electronic Engineering

Online availability

10.1109/55.910625

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abstract = "The operation of a silicon nanocrystal quantum-dot based flash memory device is simulated numerically with emphasis on energy and charge quantization in the quantum-dot. The simulation involves the self-consistent solution of three-dimensional (3-D) Poisson and Schr{\"o}dinger-like equations, with the Slater rule for determining the charging voltage. We also compute the capacitance-voltage characteristics of the device and derive the threshold voltage, VT, variation with single-electron charging as a function of design parameters.",

keywords = "Computer modeling, Flash memory, Silicon nanocrystal, Single-electron charging",

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N2 - The operation of a silicon nanocrystal quantum-dot based flash memory device is simulated numerically with emphasis on energy and charge quantization in the quantum-dot. The simulation involves the self-consistent solution of three-dimensional (3-D) Poisson and Schrödinger-like equations, with the Slater rule for determining the charging voltage. We also compute the capacitance-voltage characteristics of the device and derive the threshold voltage, VT, variation with single-electron charging as a function of design parameters.

AB - The operation of a silicon nanocrystal quantum-dot based flash memory device is simulated numerically with emphasis on energy and charge quantization in the quantum-dot. The simulation involves the self-consistent solution of three-dimensional (3-D) Poisson and Schrödinger-like equations, with the Slater rule for determining the charging voltage. We also compute the capacitance-voltage characteristics of the device and derive the threshold voltage, VT, variation with single-electron charging as a function of design parameters.

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3-D computer simulation of single-electron charging in silicon nanocrystal floating gate flash memory devices

Abstract

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