2.8 μm emission from type-I quantum wells grown on InAs xP1-x/InP metamorphic graded buffers

Daehwan Jung; Yuncheng Song; Lan Yu; Daniel Wasserman; Minjoo Larry Lee

doi:10.1063/1.4773024

2.8 μm emission from type-I quantum wells grown on InAs _xP_1-x/InP metamorphic graded buffers

Daehwan Jung, Yuncheng Song, Lan Yu, Daniel Wasserman, Minjoo Larry Lee

Research output: Contribution to journal › Article › peer-review

Abstract

We report 2.8 μm emission from compressively strained type-I quantum wells (QWs) grown on InP-based metamorphic InAs_xP_1-x step-graded buffers. High quality metamorphic graded buffers showed smooth surface morphology and low threading dislocation densities of approximately 2.5 × 10⁶ cm^-2. High-resolution x-ray diffraction scans showed strong satellites from multiple quantum wells grown on metamorphic buffers, and cross-sectional transmission electron microscopy revealed smooth and coherent quantum well interfaces. Room-temperature photoluminescence emission at 2.8 μm with a narrow linewidth (∼50 meV) shows the promise of metamorphic growth for mid-infrared laser diodes on InP.

Original language	English (US)
Article number	251107
Journal	Applied Physics Letters
Volume	101
Issue number	25
DOIs	https://doi.org/10.1063/1.4773024
State	Published - Dec 17 2012
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Online availability

10.1063/1.4773024

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Cite this

@article{3ce9f24a9af54d0c8a09f78d67b91c84,

title = "2.8 μm emission from type-I quantum wells grown on InAs xP1-x/InP metamorphic graded buffers",

abstract = "We report 2.8 μm emission from compressively strained type-I quantum wells (QWs) grown on InP-based metamorphic InAsxP1-x step-graded buffers. High quality metamorphic graded buffers showed smooth surface morphology and low threading dislocation densities of approximately 2.5 × 106 cm-2. High-resolution x-ray diffraction scans showed strong satellites from multiple quantum wells grown on metamorphic buffers, and cross-sectional transmission electron microscopy revealed smooth and coherent quantum well interfaces. Room-temperature photoluminescence emission at 2.8 μm with a narrow linewidth (∼50 meV) shows the promise of metamorphic growth for mid-infrared laser diodes on InP.",

author = "Daehwan Jung and Yuncheng Song and Lan Yu and Daniel Wasserman and {Larry Lee}, Minjoo",

note = "Funding Information: Facilities used were supported by Yale Institute for Nanoscience and Quantum Engineering and NSF MRSEC DMR 1119826. Also, Daniel Wasserman and Lan Yu are grateful for support from the NSF ECCS CAREER Award No. 1157933.",

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language = "English (US)",

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T1 - 2.8 μm emission from type-I quantum wells grown on InAs xP1-x/InP metamorphic graded buffers

AU - Jung, Daehwan

AU - Song, Yuncheng

AU - Yu, Lan

AU - Wasserman, Daniel

AU - Larry Lee, Minjoo

N1 - Funding Information: Facilities used were supported by Yale Institute for Nanoscience and Quantum Engineering and NSF MRSEC DMR 1119826. Also, Daniel Wasserman and Lan Yu are grateful for support from the NSF ECCS CAREER Award No. 1157933.

PY - 2012/12/17

Y1 - 2012/12/17

N2 - We report 2.8 μm emission from compressively strained type-I quantum wells (QWs) grown on InP-based metamorphic InAsxP1-x step-graded buffers. High quality metamorphic graded buffers showed smooth surface morphology and low threading dislocation densities of approximately 2.5 × 106 cm-2. High-resolution x-ray diffraction scans showed strong satellites from multiple quantum wells grown on metamorphic buffers, and cross-sectional transmission electron microscopy revealed smooth and coherent quantum well interfaces. Room-temperature photoluminescence emission at 2.8 μm with a narrow linewidth (∼50 meV) shows the promise of metamorphic growth for mid-infrared laser diodes on InP.

AB - We report 2.8 μm emission from compressively strained type-I quantum wells (QWs) grown on InP-based metamorphic InAsxP1-x step-graded buffers. High quality metamorphic graded buffers showed smooth surface morphology and low threading dislocation densities of approximately 2.5 × 106 cm-2. High-resolution x-ray diffraction scans showed strong satellites from multiple quantum wells grown on metamorphic buffers, and cross-sectional transmission electron microscopy revealed smooth and coherent quantum well interfaces. Room-temperature photoluminescence emission at 2.8 μm with a narrow linewidth (∼50 meV) shows the promise of metamorphic growth for mid-infrared laser diodes on InP.

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