25-Gb/s direct modulation of implant confined holey vertical-cavity surface-emitting lasers

Chen Chen, Zhaobing Tian, Kent D Choquette, David V. Plant

Research output: Contribution to journalArticle

Abstract

A 25-Gb/s direct modulation of an 850-nm implantconfined holey vertical-cavity surface-emitting laser (VCSEL) is demonstrated with a low operation current density of 7.4 KA/cm2, The high-speed performance arises from cavity designs that are achieved using standard fabrication and epitaxial materials. The etched holey structure is incorporated into the top mirror of the VCSEL to tailor the size of the optical cavity independent from that of the electrical current aperture, enabling us to achieve high-speed modulation and low operation current density simultaneously.

Original languageEnglish (US)
Article number5401084
Pages (from-to)465-467
Number of pages3
JournalIEEE Photonics Technology Letters
Volume22
Issue number7
DOIs
StatePublished - Apr 1 2010

Fingerprint

Surface emitting lasers
surface emitting lasers
Current density
Modulation
modulation
cavities
Mirrors
high speed
current density
Fabrication
apertures
mirrors
fabrication

Keywords

  • High-speed modulation
  • Optical interconnects
  • Semiconductor lasers
  • Vertical-cavity surface-emitting lasers (VCSELs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

25-Gb/s direct modulation of implant confined holey vertical-cavity surface-emitting lasers. / Chen, Chen; Tian, Zhaobing; Choquette, Kent D; Plant, David V.

In: IEEE Photonics Technology Letters, Vol. 22, No. 7, 5401084, 01.04.2010, p. 465-467.

Research output: Contribution to journalArticle

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