25-Gb/s direct modulation of implant confined holey vertical-cavity surface-emitting lasers

Chen Chen; Zhaobing Tian; Kent D Choquette; David V. Plant

doi:10.1109/LPT.2010.2040990

25-Gb/s direct modulation of implant confined holey vertical-cavity surface-emitting lasers

Chen Chen, Zhaobing Tian, Kent D Choquette, David V. Plant

Research output: Contribution to journal › Article › peer-review

Abstract

A 25-Gb/s direct modulation of an 850-nm implantconfined holey vertical-cavity surface-emitting laser (VCSEL) is demonstrated with a low operation current density of 7.4 KA/cm², The high-speed performance arises from cavity designs that are achieved using standard fabrication and epitaxial materials. The etched holey structure is incorporated into the top mirror of the VCSEL to tailor the size of the optical cavity independent from that of the electrical current aperture, enabling us to achieve high-speed modulation and low operation current density simultaneously.

Original language	English (US)
Article number	5401084
Pages (from-to)	465-467
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	22
Issue number	7
DOIs	https://doi.org/10.1109/LPT.2010.2040990
State	Published - Apr 1 2010

Keywords

High-speed modulation
Optical interconnects
Semiconductor lasers
Vertical-cavity surface-emitting lasers (VCSELs)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Online availability

10.1109/LPT.2010.2040990

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abstract = "A 25-Gb/s direct modulation of an 850-nm implantconfined holey vertical-cavity surface-emitting laser (VCSEL) is demonstrated with a low operation current density of 7.4 KA/cm2, The high-speed performance arises from cavity designs that are achieved using standard fabrication and epitaxial materials. The etched holey structure is incorporated into the top mirror of the VCSEL to tailor the size of the optical cavity independent from that of the electrical current aperture, enabling us to achieve high-speed modulation and low operation current density simultaneously.",

keywords = "High-speed modulation, Optical interconnects, Semiconductor lasers, Vertical-cavity surface-emitting lasers (VCSELs)",

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AU - Chen, Chen

AU - Tian, Zhaobing

AU - Choquette, Kent D

AU - Plant, David V.

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Y1 - 2010/4/1

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AB - A 25-Gb/s direct modulation of an 850-nm implantconfined holey vertical-cavity surface-emitting laser (VCSEL) is demonstrated with a low operation current density of 7.4 KA/cm2, The high-speed performance arises from cavity designs that are achieved using standard fabrication and epitaxial materials. The etched holey structure is incorporated into the top mirror of the VCSEL to tailor the size of the optical cavity independent from that of the electrical current aperture, enabling us to achieve high-speed modulation and low operation current density simultaneously.

KW - High-speed modulation

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KW - Semiconductor lasers

KW - Vertical-cavity surface-emitting lasers (VCSELs)

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25-Gb/s direct modulation of implant confined holey vertical-cavity surface-emitting lasers

Abstract

Keywords

ASJC Scopus subject areas

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