Abstract
This paper presents the design and implementation of an RF CMOS low noise amplifier (LNA) in a 130-nm CMOS technology for 24-GHz industrial, scientific, and medical (ISM) applications. The use of coplanar waveguide (CPW) structures as series feedback enables simultaneous noise and power matching, which is a fundamental trade-off in LNA design. Accurate high frequency noise modeling of nanometer MOSFETs using in-house high-field drifting-dipole noise (DDN) model is also introduced for first-pass silicon design. The LNA prototype shows a gain of 19 dB and a noise figure NF of 3.8 dB measured at 24 GHz while consuming 15 mW from a 1.2-V power supply.
| Original language | English (US) |
|---|---|
| Title of host publication | APMC 2009 - Asia Pacific Microwave Conference 2009 |
| Pages | 1148-1151 |
| Number of pages | 4 |
| DOIs | |
| State | Published - Dec 1 2009 |
| Event | Asia Pacific Microwave Conference 2009, APMC 2009 - Singapore, Singapore Duration: Dec 7 2009 → Dec 10 2009 |
Publication series
| Name | APMC 2009 - Asia Pacific Microwave Conference 2009 |
|---|
Other
| Other | Asia Pacific Microwave Conference 2009, APMC 2009 |
|---|---|
| Country | Singapore |
| City | Singapore |
| Period | 12/7/09 → 12/10/09 |
Keywords
- CPW series feedback
- Drifting-dipole noise (DDN)
- Low noise amplifier (LNA)
- RF CMOS
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering
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Cite this
Nguyen, G. D., Chiu, Y., & Feng, M. (2009). 24-GHz low noise amplifier using coplanar waveguide series feedback in 130-nm CMOS. In APMC 2009 - Asia Pacific Microwave Conference 2009 (pp. 1148-1151). [5384403] (APMC 2009 - Asia Pacific Microwave Conference 2009). https://doi.org/10.1109/APMC.2009.5384403