(220)-oriented Cu(In,Ga)Se2-evidence that it may improve solar cell performance

D. Liao; A. Rockett

doi:10.1109/PVSC.2000.915865

(220)-oriented Cu(In,Ga)Se₂-evidence that it may improve solar cell performance

D. Liao, A. Rockett

Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Recent solar cell results suggest that a (220) or (204) orientation of CIGS thin films may have unique and possibly superior properties. We have deposited high-quality epitaxial mixed (220) and (204)-oriented CIGS layers on GaAs (110). The surfaces consist of highly tilted terraces of large flat (112) facets alternating with rough (112) planes. Temperature-dependent Hall-effect shows up to a 20 fold decrease in carrier concentration relative to films grown with (112) and (002) orientations. Carrier compensation and other defects observed in the (002) and (112) oriented films was reduced without Na addition In the (220)/(204) films. Changes in the hole mobility were also observed. Theoretical modeling using the AMPS computer code suggests that such a change in carrier concentration could lead to improvements in device performances in sufficiently good devices, consistent with observations.

Original language	English (US)
Title of host publication	Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	446-449
Number of pages	4
Volume	2000-January
ISBN (Electronic)	0780357728
DOIs	https://doi.org/10.1109/PVSC.2000.915865
State	Published - 2000
Event	28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States Duration: Sep 15 2000 → Sep 22 2000

Other

Other	28th IEEE Photovoltaic Specialists Conference, PVSC 2000
Country/Territory	United States
City	Anchorage
Period	9/15/00 → 9/22/00

ASJC Scopus subject areas

Electrical and Electronic Engineering
Control and Systems Engineering
Industrial and Manufacturing Engineering

Online availability

10.1109/PVSC.2000.915865

Library availability

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Cite this

(220)-oriented Cu(In,Ga)Se₂-evidence that it may improve solar cell performance. / Liao, D.; Rockett, A.

Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000. Vol. 2000-January Institute of Electrical and Electronics Engineers Inc., 2000. p. 446-449 915865.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Liao, D & Rockett, A 2000, (220)-oriented Cu(In,Ga)Se₂-evidence that it may improve solar cell performance. in Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000. vol. 2000-January, 915865, Institute of Electrical and Electronics Engineers Inc., pp. 446-449, 28th IEEE Photovoltaic Specialists Conference, PVSC 2000, Anchorage, United States, 9/15/00. https://doi.org/10.1109/PVSC.2000.915865

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abstract = "Recent solar cell results suggest that a (220) or (204) orientation of CIGS thin films may have unique and possibly superior properties. We have deposited high-quality epitaxial mixed (220) and (204)-oriented CIGS layers on GaAs (110). The surfaces consist of highly tilted terraces of large flat (112) facets alternating with rough (112) planes. Temperature-dependent Hall-effect shows up to a 20 fold decrease in carrier concentration relative to films grown with (112) and (002) orientations. Carrier compensation and other defects observed in the (002) and (112) oriented films was reduced without Na addition In the (220)/(204) films. Changes in the hole mobility were also observed. Theoretical modeling using the AMPS computer code suggests that such a change in carrier concentration could lead to improvements in device performances in sufficiently good devices, consistent with observations.",

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