(220)-oriented Cu(In,Ga)Se2-evidence that it may improve solar cell performance

D. Liao, A. Rockett

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Recent solar cell results suggest that a (220) or (204) orientation of CIGS thin films may have unique and possibly superior properties. We have deposited high-quality epitaxial mixed (220) and (204)-oriented CIGS layers on GaAs (110). The surfaces consist of highly tilted terraces of large flat (112) facets alternating with rough (112) planes. Temperature-dependent Hall-effect shows up to a 20 fold decrease in carrier concentration relative to films grown with (112) and (002) orientations. Carrier compensation and other defects observed in the (002) and (112) oriented films was reduced without Na addition In the (220)/(204) films. Changes in the hole mobility were also observed. Theoretical modeling using the AMPS computer code suggests that such a change in carrier concentration could lead to improvements in device performances in sufficiently good devices, consistent with observations.

Original languageEnglish (US)
Title of host publicationConference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages446-449
Number of pages4
Volume2000-January
ISBN (Electronic)0780357728
DOIs
StatePublished - 2000
Event28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States
Duration: Sep 15 2000Sep 22 2000

Other

Other28th IEEE Photovoltaic Specialists Conference, PVSC 2000
CountryUnited States
CityAnchorage
Period9/15/009/22/00

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Liao, D., & Rockett, A. (2000). (220)-oriented Cu(In,Ga)Se2-evidence that it may improve solar cell performance. In Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000 (Vol. 2000-January, pp. 446-449). [915865] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2000.915865