22 nm node wafer inspection using diffraction phase microscopy and image post-processing

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We applied epi-illumination diffraction phase microscopy to measure the amplitude and phase of the scattered field from a SEMATECH 22 nm node intentional defect array (IDA) wafer. We used several imaging processing techniques to remove the wafer's underlying structure and reduce both the spatial and temporal noise and eliminate the system calibration error to produce stretched panoramic amplitude and phase images. From the stretched images, we detected defects down to 20 nm × 160 nm for a parallel bridge, 20 nm × 100 nm for perpendicular bridge, and 35 nm × 70 nm for an isolated dot.

Original languageEnglish (US)
Title of host publicationMetrology, Inspection, and Process Control for Microlithography XXVII
DOIs
StatePublished - Jun 10 2013
Event27th Conference on Metrology, Inspection, and Process Control for Microlithography - San Jose, CA, United States
Duration: Feb 25 2013Feb 28 2013

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8681
ISSN (Print)0277-786X

Other

Other27th Conference on Metrology, Inspection, and Process Control for Microlithography
CountryUnited States
CitySan Jose, CA
Period2/25/132/28/13

Keywords

  • Image processing
  • Interference microscope
  • Phase imaging
  • Signal to noise ratio
  • Wafer defect inspection

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of '22 nm node wafer inspection using diffraction phase microscopy and image post-processing'. Together they form a unique fingerprint.

Cite this