@inproceedings{0e78f566a8444ae786ed7f59c2fb5b7e,
title = "2.19 eV InGaP solar cells on GaP substrates",
abstract = "We have grown, via molecular beam epitaxy (MBE), the first metamorphic In0.26Ga0.74P solar cells with a 2.19 eV direct bandgap on GaP to serve as the top cell in a multi-junction device. Calculations show that the incorporation of a 2.0-2.2 eV top cell into future 4-6 junction cells could enable efficiencies as high as 60\%. GaAsxP1-x graded buffers enabled a moderate threading dislocation density of 6×10 6 cm-2 in the In0.26Ga0.74P solar cells. Open circuit voltages (Voc) as high as 1.42 V were observed under approximate AM1.5G illumination. Little work has been reported on the MBE growth of such highbandgap InyGa1-yP, and we believe that this Voc can be improved through systematic optimization of growth conditions. Although these devices were not optimized for current collection, we obtain an efficiency of 3.13\%, surpassing that of the best GaP solar cells. Finally, as this composition is near the direct-indirect crossover point, we analyzed the low-energy cutoff of the external quantum efficiency spectrum and infer that our In0.26Ga0.74P cells are still in the direct regime.",
keywords = "InGaP, Metamorphic, Molecular beam epitaxy, Wide-bandgap",
author = "Stephanie Tomasulo and Joseph Faucher and Lang, \{Jordan R.\} and Yaung, \{Kevin Nay\} and Lee, \{Minjoo Larry\}",
year = "2013",
doi = "10.1109/PVSC.2013.6745162",
language = "English (US)",
isbn = "9781479932993",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "3324--3328",
booktitle = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013",
address = "United States",
note = "39th IEEE Photovoltaic Specialists Conference, PVSC 2013 ; Conference date: 16-06-2013 Through 21-06-2013",
}