@inproceedings{f8ead609b7404a1c89db5109c01906a0,
title = "2.1 - 2.2 eV AlGaInP solar cells grown by molecular beam epitaxy",
abstract = "2.1 - 2.2 eV top cells are an essential and challenging part of future high-efficiency multi-junction solar cells. In this work, we report 2.1 and 2.2 eV AlGaInP solar cells grown by molecular beam epitaxy (MBE) on GaAs. As-grown cells exhibit strong trap-assisted recombination, resulting in high bandgap-voltage offset (WOC) values and compromised carrier collection. Bringing the space charge region of the solar cell closer to the front surface by eliminating extra thickness improves carrier collection due to short minority carrier diffusion length. Another consequence of insufficient diffusion length is that field-assisted carrier collection (FACC) significantly degrades the fill factor of the AlGaInP solar cells presented here. Rapid thermal annealing (RTA) leads to increased photoluminescence intensity and shows the potential for improved cell performance.",
keywords = "AlGaInP, MBE, molecular beam epitaxy, phosphide, solar cell",
author = "Yukun Sun and Shizhao Fan and Joseph Faucher and Ryan Hool and Brian Li and Lee, {Minjoo Larry}",
note = "Funding Information: The work of Y. Sun, S. Fan, B. D. Li, and M. L. Lee was supported by the National Science Foundation under Grants 1736181, 1719567, and 1713068. R. D. Hool was supported by a NASA Space Technology Research Fellowship. Publisher Copyright: {\textcopyright} 2019 IEEE.; 46th IEEE Photovoltaic Specialists Conference, PVSC 2019 ; Conference date: 16-06-2019 Through 21-06-2019",
year = "2019",
month = jun,
doi = "10.1109/PVSC40753.2019.8980844",
language = "English (US)",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "284--287",
booktitle = "2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019",
address = "United States",
}