2.1 - 2.2 eV AlGaInP solar cells grown by molecular beam epitaxy

Yukun Sun, Shizhao Fan, Joseph Faucher, Ryan Hool, Brian Li, Minjoo Larry Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

2.1 - 2.2 eV top cells are an essential and challenging part of future high-efficiency multi-junction solar cells. In this work, we report 2.1 and 2.2 eV AlGaInP solar cells grown by molecular beam epitaxy (MBE) on GaAs. As-grown cells exhibit strong trap-assisted recombination, resulting in high bandgap-voltage offset (WOC) values and compromised carrier collection. Bringing the space charge region of the solar cell closer to the front surface by eliminating extra thickness improves carrier collection due to short minority carrier diffusion length. Another consequence of insufficient diffusion length is that field-assisted carrier collection (FACC) significantly degrades the fill factor of the AlGaInP solar cells presented here. Rapid thermal annealing (RTA) leads to increased photoluminescence intensity and shows the potential for improved cell performance.

Original languageEnglish (US)
Title of host publication2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages284-287
Number of pages4
ISBN (Electronic)9781728104942
DOIs
StatePublished - Jun 2019
Event46th IEEE Photovoltaic Specialists Conference, PVSC 2019 - Chicago, United States
Duration: Jun 16 2019Jun 21 2019

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference46th IEEE Photovoltaic Specialists Conference, PVSC 2019
CountryUnited States
CityChicago
Period6/16/196/21/19

Keywords

  • AlGaInP
  • MBE
  • molecular beam epitaxy
  • phosphide
  • solar cell

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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  • Cite this

    Sun, Y., Fan, S., Faucher, J., Hool, R., Li, B., & Lee, M. L. (2019). 2.1 - 2.2 eV AlGaInP solar cells grown by molecular beam epitaxy. In 2019 IEEE 46th Photovoltaic Specialists Conference, PVSC 2019 (pp. 284-287). [8980844] (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC40753.2019.8980844