2.0–2.2 eV AlGaInP solar cells grown by molecular beam epitaxy

Yukun Sun, Shizhao Fan, Joseph Faucher, Ryan D. Hool, Brian D. Li, Pankul Dhingra, Minjoo Larry Lee

Research output: Contribution to journalArticle

Abstract

We demonstrate 2.0–2.2 eV AlGaInP solar cells grown by molecular beam epitaxy and their performance improvement by rapid thermal annealing (RTA). As grown, these cells exhibit lower performance than their counterparts grown by metal-organic vapor phase epitaxy (MOVPE), indicating a high concentration of point defects. RTA improves all aspects of performance, enabling our 2.0 eV cells to match the efficiency of MOVPE-grown cells. RTA also improves the performance of wider-bandgap AlGaInP solar cells, but the magnitude of improvement decreases with %Al/bandgap energy.

Original languageEnglish (US)
Article number110774
JournalSolar Energy Materials and Solar Cells
Volume219
DOIs
StatePublished - Jan 2021

Keywords

  • AlGaInP
  • Molecular beam epitaxy
  • Rapid thermal annealing
  • Solar cells

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films

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