Steve G. Bandy, Clifford K. Nishimoto, Cindy Yuen, Ross A. Larue, Mary Day, Jim Eckstein, Zoilo C.H. Tan, Christopher Webb, George A. Zdasiuk

Research output: Contribution to journalArticlepeer-review


A low-noise 2-21-GHz monolithic distributed amplifier utilizing 0. 35- mu m-gate-length HEMT (high-electron-mobility transistor) devices has achieved 12 plus or minus 0. 5 dB of gain. A low noise figure of 3 dB was achieved midband (4-12 GHz). The circuit design utilizes five HEMT transistors of varying width with gates fabricated by E-beam lithography. The same amplifier fabricated with 0. 35- mu m-gate-length MESFETs in place of the HEMT devices resulted in 9. 5 plus or minus 0. 5 dB of gain across the 2-20-GHz band. It is concluded from this that the use of HEMT devices, rather than the small gate lengths, is primarily responsible for the HEMT amplifier performance.

Original languageEnglish (US)
JournalIEEE Transactions on Electron Devices
Issue number12
StatePublished - Dec 1987
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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