A low-noise 2-21-GHz monolithic distributed amplifier utilizing 0. 35- mu m-gate-length HEMT (high-electron-mobility transistor) devices has achieved 12 plus or minus 0. 5 dB of gain. A low noise figure of 3 dB was achieved midband (4-12 GHz). The circuit design utilizes five HEMT transistors of varying width with gates fabricated by E-beam lithography. The same amplifier fabricated with 0. 35- mu m-gate-length MESFETs in place of the HEMT devices resulted in 9. 5 plus or minus 0. 5 dB of gain across the 2-20-GHz band. It is concluded from this that the use of HEMT devices, rather than the small gate lengths, is primarily responsible for the HEMT amplifier performance.
|Original language||English (US)|
|Journal||IEEE Transactions on Electron Devices|
|State||Published - Dec 1 1987|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering