2-20-GHZ HIGH-GAIN MONOLITHIC HEMT DISTRIBUTED AMPLIFIER.

Steve G. Bandy, Clifford K. Nishimoto, Cindy Yuen, Ross A. Larue, Mary Day, Jim Eckstein, Zoilo C.H. Tan, Christopher Webb, George A. Zdasiuk

Research output: Contribution to journalArticle

Abstract

A low-noise 2-21-GHz monolithic distributed amplifier utilizing 0. 35- mu m-gate-length HEMT (high-electron-mobility transistor) devices has achieved 12 plus or minus 0. 5 dB of gain. A low noise figure of 3 dB was achieved midband (4-12 GHz). The circuit design utilizes five HEMT transistors of varying width with gates fabricated by E-beam lithography. The same amplifier fabricated with 0. 35- mu m-gate-length MESFETs in place of the HEMT devices resulted in 9. 5 plus or minus 0. 5 dB of gain across the 2-20-GHz band. It is concluded from this that the use of HEMT devices, rather than the small gate lengths, is primarily responsible for the HEMT amplifier performance.

Original languageEnglish (US)
JournalIEEE Transactions on Electron Devices
VolumeED-34
Issue number12
StatePublished - Dec 1 1987
Externally publishedYes

Fingerprint

transistor amplifiers
High electron mobility transistors
high electron mobility transistors
high gain
Gates (transistor)
low noise
distributed amplifiers
Noise figure
Lithography
Transistors
transistors
field effect transistors
lithography
amplifiers
Networks (circuits)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Bandy, S. G., Nishimoto, C. K., Yuen, C., Larue, R. A., Day, M., Eckstein, J., ... Zdasiuk, G. A. (1987). 2-20-GHZ HIGH-GAIN MONOLITHIC HEMT DISTRIBUTED AMPLIFIER. IEEE Transactions on Electron Devices, ED-34(12).

2-20-GHZ HIGH-GAIN MONOLITHIC HEMT DISTRIBUTED AMPLIFIER. / Bandy, Steve G.; Nishimoto, Clifford K.; Yuen, Cindy; Larue, Ross A.; Day, Mary; Eckstein, Jim; Tan, Zoilo C.H.; Webb, Christopher; Zdasiuk, George A.

In: IEEE Transactions on Electron Devices, Vol. ED-34, No. 12, 01.12.1987.

Research output: Contribution to journalArticle

Bandy, SG, Nishimoto, CK, Yuen, C, Larue, RA, Day, M, Eckstein, J, Tan, ZCH, Webb, C & Zdasiuk, GA 1987, '2-20-GHZ HIGH-GAIN MONOLITHIC HEMT DISTRIBUTED AMPLIFIER.', IEEE Transactions on Electron Devices, vol. ED-34, no. 12.
Bandy SG, Nishimoto CK, Yuen C, Larue RA, Day M, Eckstein J et al. 2-20-GHZ HIGH-GAIN MONOLITHIC HEMT DISTRIBUTED AMPLIFIER. IEEE Transactions on Electron Devices. 1987 Dec 1;ED-34(12).
Bandy, Steve G. ; Nishimoto, Clifford K. ; Yuen, Cindy ; Larue, Ross A. ; Day, Mary ; Eckstein, Jim ; Tan, Zoilo C.H. ; Webb, Christopher ; Zdasiuk, George A. / 2-20-GHZ HIGH-GAIN MONOLITHIC HEMT DISTRIBUTED AMPLIFIER. In: IEEE Transactions on Electron Devices. 1987 ; Vol. ED-34, No. 12.
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