@inproceedings{5143db7cffa04005a62e2ea74443ae79,
title = "2-20 GHZ, HIGH-GAIN, MONOLITHIC HEMT DISTRIBUTED AMPLIFIER.",
abstract = "A low-noise 2-20 GHz monolithic distributed amplifier utilizing 0. 3-micrometer gate-length high electron mobility transistor (HEMT) devices has achieved 11 dB plus or minus 0. 5 dB of gain. This represents the highest gain reported for a distributed amplifier using single-FET gain cells. A low noise figure of 3 dB was achieved midband (7-12 GHz). The circuit design utilizes five HEMT transistors of varying width with gates fabricated by E-beam lithography.",
author = "C. Nishimoto and R. LaRue and S. Bandy and M. Day and J. Eckstein and C. Webb and C. Yuen and G. Zdasiuk",
year = "1987",
language = "English (US)",
isbn = "0818607742",
series = "Digest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium",
publisher = "IEEE",
pages = "109--113",
booktitle = "Digest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium",
}