2-20 GHZ, HIGH-GAIN, MONOLITHIC HEMT DISTRIBUTED AMPLIFIER.

C. Nishimoto, R. LaRue, S. Bandy, M. Day, J. Eckstein, C. Webb, C. Yuen, G. Zdasiuk

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A low-noise 2-20 GHz monolithic distributed amplifier utilizing 0. 3-micrometer gate-length high electron mobility transistor (HEMT) devices has achieved 11 dB plus or minus 0. 5 dB of gain. This represents the highest gain reported for a distributed amplifier using single-FET gain cells. A low noise figure of 3 dB was achieved midband (7-12 GHz). The circuit design utilizes five HEMT transistors of varying width with gates fabricated by E-beam lithography.

Original languageEnglish (US)
Title of host publicationDigest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium
PublisherIEEE
Pages109-113
Number of pages5
ISBN (Print)0818607742
StatePublished - Jan 1 1987
Externally publishedYes

Publication series

NameDigest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Nishimoto, C., LaRue, R., Bandy, S., Day, M., Eckstein, J., Webb, C., Yuen, C., & Zdasiuk, G. (1987). 2-20 GHZ, HIGH-GAIN, MONOLITHIC HEMT DISTRIBUTED AMPLIFIER. In Digest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium (pp. 109-113). (Digest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium). IEEE.