2-20 GHZ, HIGH-GAIN, MONOLITHIC HEMT DISTRIBUTED AMPLIFIER.

C. Nishimoto, R. LaRue, S. Bandy, M. Day, J. Eckstein, C. Webb, C. Yuen, G. Zdasiuk

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A low-noise 2-20 GHz monolithic distributed amplifier utilizing 0. 3-micrometer gate-length high electron mobility transistor (HEMT) devices has achieved 11 dB plus or minus 0. 5 dB of gain. This represents the highest gain reported for a distributed amplifier using single-FET gain cells. A low noise figure of 3 dB was achieved midband (7-12 GHz). The circuit design utilizes five HEMT transistors of varying width with gates fabricated by E-beam lithography.

Original languageEnglish (US)
Title of host publicationDigest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium
PublisherIEEE
Pages109-113
Number of pages5
ISBN (Print)0818607742
StatePublished - Jan 1 1987
Externally publishedYes

Publication series

NameDigest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium

Fingerprint

High electron mobility transistors
Gates (transistor)
Noise figure
Field effect transistors
Lithography
Transistors
Networks (circuits)

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Nishimoto, C., LaRue, R., Bandy, S., Day, M., Eckstein, J., Webb, C., ... Zdasiuk, G. (1987). 2-20 GHZ, HIGH-GAIN, MONOLITHIC HEMT DISTRIBUTED AMPLIFIER. In Digest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium (pp. 109-113). (Digest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium). IEEE.

2-20 GHZ, HIGH-GAIN, MONOLITHIC HEMT DISTRIBUTED AMPLIFIER. / Nishimoto, C.; LaRue, R.; Bandy, S.; Day, M.; Eckstein, J.; Webb, C.; Yuen, C.; Zdasiuk, G.

Digest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium. IEEE, 1987. p. 109-113 (Digest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nishimoto, C, LaRue, R, Bandy, S, Day, M, Eckstein, J, Webb, C, Yuen, C & Zdasiuk, G 1987, 2-20 GHZ, HIGH-GAIN, MONOLITHIC HEMT DISTRIBUTED AMPLIFIER. in Digest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium, IEEE, pp. 109-113.
Nishimoto C, LaRue R, Bandy S, Day M, Eckstein J, Webb C et al. 2-20 GHZ, HIGH-GAIN, MONOLITHIC HEMT DISTRIBUTED AMPLIFIER. In Digest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium. IEEE. 1987. p. 109-113. (Digest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium).
Nishimoto, C. ; LaRue, R. ; Bandy, S. ; Day, M. ; Eckstein, J. ; Webb, C. ; Yuen, C. ; Zdasiuk, G. / 2-20 GHZ, HIGH-GAIN, MONOLITHIC HEMT DISTRIBUTED AMPLIFIER. Digest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium. IEEE, 1987. pp. 109-113 (Digest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium).
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