A low-noise 2-20 GHz monolithic distributed amplifier utilizing 0. 3-micrometer gate-length high electron mobility transistor (HEMT) devices has achieved 11 dB plus or minus 0. 5 dB of gain. This represents the highest gain reported for a distributed amplifier using single-FET gain cells. A low noise figure of 3 dB was achieved midband (7-12 GHz). The circuit design utilizes five HEMT transistors of varying width with gates fabricated by E-beam lithography.
|Original language||English (US)|
|Title of host publication||Digest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium|
|Number of pages||5|
|State||Published - Jan 1 1987|
|Name||Digest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium|
ASJC Scopus subject areas