2-20 GHZ, HIGH-GAIN, MONOLITHIC HEMT DISTRIBUTED AMPLIFIER.

C. Nishimoto, R. LaRue, S. Bandy, M. Day, J. Eckstein, C. Webb, C. Yuen, G. Zdasiuk

Research output: Contribution to journalConference article

Abstract

A low-noise 2-20-GHz monolithic distributed amplifier utilizing 0. 3- mu m gate-length HEMT devices has achieved 11-dB plus or minus 0. 5 dB of gain the authors believe that this represents the highest gain reported for a distributed amplifier using single-FET gain cells. A record low noise figure of 3 dB was achieved midband (7-12 GHz). The circuit design utilizes five HEMT transistors of varying width with gates fabricated by E-beam lithography.

Original languageEnglish (US)
Pages (from-to)155-159
Number of pages5
JournalIEEE MTT-S International Microwave Symposium Digest
StatePublished - Jan 1 1987
Externally publishedYes

Fingerprint

distributed amplifiers
High electron mobility transistors
high electron mobility transistors
high gain
low noise
Gates (transistor)
Noise figure
Field effect transistors
Lithography
Transistors
transistors
field effect transistors
lithography
Networks (circuits)
cells

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Nishimoto, C., LaRue, R., Bandy, S., Day, M., Eckstein, J., Webb, C., ... Zdasiuk, G. (1987). 2-20 GHZ, HIGH-GAIN, MONOLITHIC HEMT DISTRIBUTED AMPLIFIER. IEEE MTT-S International Microwave Symposium Digest, 155-159.

2-20 GHZ, HIGH-GAIN, MONOLITHIC HEMT DISTRIBUTED AMPLIFIER. / Nishimoto, C.; LaRue, R.; Bandy, S.; Day, M.; Eckstein, J.; Webb, C.; Yuen, C.; Zdasiuk, G.

In: IEEE MTT-S International Microwave Symposium Digest, 01.01.1987, p. 155-159.

Research output: Contribution to journalConference article

Nishimoto, C, LaRue, R, Bandy, S, Day, M, Eckstein, J, Webb, C, Yuen, C & Zdasiuk, G 1987, '2-20 GHZ, HIGH-GAIN, MONOLITHIC HEMT DISTRIBUTED AMPLIFIER.', IEEE MTT-S International Microwave Symposium Digest, pp. 155-159.
Nishimoto, C. ; LaRue, R. ; Bandy, S. ; Day, M. ; Eckstein, J. ; Webb, C. ; Yuen, C. ; Zdasiuk, G. / 2-20 GHZ, HIGH-GAIN, MONOLITHIC HEMT DISTRIBUTED AMPLIFIER. In: IEEE MTT-S International Microwave Symposium Digest. 1987 ; pp. 155-159.
@article{8e8db75c062d48b2812408a4ae11121f,
title = "2-20 GHZ, HIGH-GAIN, MONOLITHIC HEMT DISTRIBUTED AMPLIFIER.",
abstract = "A low-noise 2-20-GHz monolithic distributed amplifier utilizing 0. 3- mu m gate-length HEMT devices has achieved 11-dB plus or minus 0. 5 dB of gain the authors believe that this represents the highest gain reported for a distributed amplifier using single-FET gain cells. A record low noise figure of 3 dB was achieved midband (7-12 GHz). The circuit design utilizes five HEMT transistors of varying width with gates fabricated by E-beam lithography.",
author = "C. Nishimoto and R. LaRue and S. Bandy and M. Day and J. Eckstein and C. Webb and C. Yuen and G. Zdasiuk",
year = "1987",
month = "1",
day = "1",
language = "English (US)",
pages = "155--159",
journal = "IEEE MTT-S International Microwave Symposium Digest",
issn = "0149-645X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - 2-20 GHZ, HIGH-GAIN, MONOLITHIC HEMT DISTRIBUTED AMPLIFIER.

AU - Nishimoto, C.

AU - LaRue, R.

AU - Bandy, S.

AU - Day, M.

AU - Eckstein, J.

AU - Webb, C.

AU - Yuen, C.

AU - Zdasiuk, G.

PY - 1987/1/1

Y1 - 1987/1/1

N2 - A low-noise 2-20-GHz monolithic distributed amplifier utilizing 0. 3- mu m gate-length HEMT devices has achieved 11-dB plus or minus 0. 5 dB of gain the authors believe that this represents the highest gain reported for a distributed amplifier using single-FET gain cells. A record low noise figure of 3 dB was achieved midband (7-12 GHz). The circuit design utilizes five HEMT transistors of varying width with gates fabricated by E-beam lithography.

AB - A low-noise 2-20-GHz monolithic distributed amplifier utilizing 0. 3- mu m gate-length HEMT devices has achieved 11-dB plus or minus 0. 5 dB of gain the authors believe that this represents the highest gain reported for a distributed amplifier using single-FET gain cells. A record low noise figure of 3 dB was achieved midband (7-12 GHz). The circuit design utilizes five HEMT transistors of varying width with gates fabricated by E-beam lithography.

UR - http://www.scopus.com/inward/record.url?scp=0023211087&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023211087&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0023211087

SP - 155

EP - 159

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

SN - 0149-645X

ER -