A low-noise 2-20-GHz monolithic distributed amplifier utilizing 0. 3- mu m gate-length HEMT devices has achieved 11-dB plus or minus 0. 5 dB of gain the authors believe that this represents the highest gain reported for a distributed amplifier using single-FET gain cells. A record low noise figure of 3 dB was achieved midband (7-12 GHz). The circuit design utilizes five HEMT transistors of varying width with gates fabricated by E-beam lithography.
|Original language||English (US)|
|Number of pages||5|
|Journal||IEEE MTT-S International Microwave Symposium Digest|
|State||Published - Jan 1 1987|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering