C. Nishimoto, R. LaRue, S. Bandy, M. Day, J. Eckstein, C. Webb, C. Yuen, G. Zdasiuk

Research output: Contribution to journalConference article


A low-noise 2-20-GHz monolithic distributed amplifier utilizing 0. 3- mu m gate-length HEMT devices has achieved 11-dB plus or minus 0. 5 dB of gain the authors believe that this represents the highest gain reported for a distributed amplifier using single-FET gain cells. A record low noise figure of 3 dB was achieved midband (7-12 GHz). The circuit design utilizes five HEMT transistors of varying width with gates fabricated by E-beam lithography.

Original languageEnglish (US)
Pages (from-to)155-159
Number of pages5
JournalIEEE MTT-S International Microwave Symposium Digest
StatePublished - Jan 1 1987
Externally publishedYes

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Nishimoto, C., LaRue, R., Bandy, S., Day, M., Eckstein, J., Webb, C., Yuen, C., & Zdasiuk, G. (1987). 2-20 GHZ, HIGH-GAIN, MONOLITHIC HEMT DISTRIBUTED AMPLIFIER. IEEE MTT-S International Microwave Symposium Digest, 155-159.