Abstract
A low-noise 2-20-GHz monolithic distributed amplifier utilizing 0. 3- mu m gate-length HEMT devices has achieved 11-dB plus or minus 0. 5 dB of gain the authors believe that this represents the highest gain reported for a distributed amplifier using single-FET gain cells. A record low noise figure of 3 dB was achieved midband (7-12 GHz). The circuit design utilizes five HEMT transistors of varying width with gates fabricated by E-beam lithography.
Original language | English (US) |
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Pages (from-to) | 155-159 |
Number of pages | 5 |
Journal | IEEE MTT-S International Microwave Symposium Digest |
State | Published - 1987 |
Externally published | Yes |
ASJC Scopus subject areas
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering