188 GHz doped-channel In0.8Ga0.2P/In0.53Ga0.47As/InP HFETs

  • Z. Tang
  • , H. Hsia
  • , H. C. Kuo
  • , D. Caruth
  • , G. E. Stillman
  • , M. Feng

Research output: Contribution to journal › Article › peer-review

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Chemistry

Material Science

Engineering